Fe/Ge catalyzed carbon nanotube growth on HfO2 for nano-sensor applications
Fe/Ge catalyzed carbon nanotube growth on HfO2 for nano-sensor applications
A carbon nanotube (CNT) growth process on HfO2 is reported for the first time for application in nano-sensors. The process uses a combination of Ge nanoparticles and ferric nitrate dispersion and achieves an increase in CNT density from 0.15 to 6.2 μm length/ μm2 compared with the use of ferric nitrate dispersion alone. The growth process is validated by the fabrication of back-gate CNT field-effect transistors (CNTFETs) using Al source/drain (S/D) contacts and a H2 anneal at 400 degrees C. The transistors exhibit p-FET behavior with an Ion/Ioff ratio of 105 and a steep sub-threshold slope of 130 mV/dec. These results are rather surprising, as earlier research in the literature on CNTFETs with Al S/D electrodes showed n-FET behavior. The p-FET behavior is shown to be due to the H2 anneal, which we ascribe to the smaller electron affinity of hydrogenised CNTs. Measurements of the temperature dependence of the drain current show low Schottky barrier height Al S/D contacts after a H2 anneal, which tends to confirm this explanation.
197-200
Uchino, T.
706196b8-2f2c-403d-97aa-2995eac8572b
Ayre, G.N.
0a7c003b-00c1-4412-bd40-03005e7310c2
Smith, D.C.
d9b2c02d-b7ea-498b-9ea1-208a1681536f
Hutchison, J.L.
65f59105-495d-42a5-9c51-b62c82c3044e
de Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038
2009
Uchino, T.
706196b8-2f2c-403d-97aa-2995eac8572b
Ayre, G.N.
0a7c003b-00c1-4412-bd40-03005e7310c2
Smith, D.C.
d9b2c02d-b7ea-498b-9ea1-208a1681536f
Hutchison, J.L.
65f59105-495d-42a5-9c51-b62c82c3044e
de Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Uchino, T., Ayre, G.N., Smith, D.C., Hutchison, J.L., de Groot, C.H. and Ashburn, P.
(2009)
Fe/Ge catalyzed carbon nanotube growth on HfO2 for nano-sensor applications.
Tsoukalas, Dimitris
(ed.)
In Proceedings of the 39th European Solid-State Device Research Conference.
IEEE.
.
(doi:10.1109/ESSDERC.2009.5331539).
Record type:
Conference or Workshop Item
(Paper)
Abstract
A carbon nanotube (CNT) growth process on HfO2 is reported for the first time for application in nano-sensors. The process uses a combination of Ge nanoparticles and ferric nitrate dispersion and achieves an increase in CNT density from 0.15 to 6.2 μm length/ μm2 compared with the use of ferric nitrate dispersion alone. The growth process is validated by the fabrication of back-gate CNT field-effect transistors (CNTFETs) using Al source/drain (S/D) contacts and a H2 anneal at 400 degrees C. The transistors exhibit p-FET behavior with an Ion/Ioff ratio of 105 and a steep sub-threshold slope of 130 mV/dec. These results are rather surprising, as earlier research in the literature on CNTFETs with Al S/D electrodes showed n-FET behavior. The p-FET behavior is shown to be due to the H2 anneal, which we ascribe to the smaller electron affinity of hydrogenised CNTs. Measurements of the temperature dependence of the drain current show low Schottky barrier height Al S/D contacts after a H2 anneal, which tends to confirm this explanation.
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Published date: 2009
Additional Information:
Imported from ISI Web of Science
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 270359
URI: http://eprints.soton.ac.uk/id/eprint/270359
PURE UUID: 9a669f7d-ef67-4453-a91f-7af5b719fa5a
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Date deposited: 21 Apr 2010 07:46
Last modified: 16 Mar 2024 03:23
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Contributors
Author:
T. Uchino
Author:
G.N. Ayre
Author:
J.L. Hutchison
Editor:
Dimitris Tsoukalas
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