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Fe/Ge catalyzed carbon nanotube growth on HfO2 for nano-sensor applications

Uchino, T., Ayre, G.N., Smith, D.C., Hutchison, J.L., de Groot, C.H. and Ashburn, P. (2009) Fe/Ge catalyzed carbon nanotube growth on HfO2 for nano-sensor applications Proceedings of the 39th European Solid-State Device Research Conference. ESSDERC 2009, pp. 197-200.

Record type: Article

Abstract

A carbon nanotube (CNT) growth process on HfO2 is reported for the first time for application in nano-sensors. The process uses a combination of Ge nanoparticles and ferric nitrate dispersion and achieves an increase in CNT density from 0.15 to 6.2 μm length/ μm2 compared with the use of ferric nitrate dispersion alone. The growth process is validated by the fabrication of back-gate CNT field-effect transistors (CNTFETs) using Al source/drain (S/D) contacts and a H2 anneal at 400 degrees C. The transistors exhibit p-FET behavior with an Ion/Ioff ratio of 105 and a steep sub-threshold slope of 130 mV/dec. These results are rather surprising, as earlier research in the literature on CNTFETs with Al S/D electrodes showed n-FET behavior. The p-FET behavior is shown to be due to the H2 anneal, which we ascribe to the smaller electron affinity of hydrogenised CNTs. Measurements of the temperature dependence of the drain current show low Schottky barrier height Al S/D contacts after a H2 anneal, which tends to confirm this explanation.

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More information

Published date: 2009
Additional Information: Imported from ISI Web of Science
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 270359
URI: http://eprints.soton.ac.uk/id/eprint/270359
PURE UUID: 9a669f7d-ef67-4453-a91f-7af5b719fa5a
ORCID for C.H. de Groot: ORCID iD orcid.org/0000-0002-3850-7101

Catalogue record

Date deposited: 21 Apr 2010 07:46
Last modified: 24 Jul 2017 16:40

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Contributors

Author: T. Uchino
Author: G.N. Ayre
Author: D.C. Smith
Author: J.L. Hutchison
Author: C.H. de Groot ORCID iD
Author: P. Ashburn

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