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Electromechanical Simulation of Switching Characteristics for Nanoelectromechanical Memory

Nagami, T, Tsuchiya, Y, Saito, S, Arai, T, Shimada, T, Mizuta, H and Oda, S (2009) Electromechanical Simulation of Switching Characteristics for Nanoelectromechanical Memory Japanese Journal of Applied Physics, 48, -.

Record type: Article

Abstract

The static switching properties and readout characteristics of proposed high-speed and nonvolatile nanoelectromechanical (NEM) memory devices are investigated By conducting a three-dimensional finite element mechanical simulation combined with an electrostatic analysis, we analyze the electromechanical switching operation of a mechanically bistable NEM floating gate by applying gate voltage. We show that switching voltage can be reduced to less than 10V by reducing the zero-bias displacement of the floating gate and optimizing the cavity structure to improve mechanical symmetry. We also analyze the electrical readout property of the NEM memory devices by combining the electromechanical simulation with a drift-diffusion analysis We demonstrate that the mechanically bistable states of the floating gate can be detected via the changes in drain current with an ON/OFF current ratio of about 3 x 10 (C) 2009 The Japan Society of Applied Physics

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More information

Published date: 2009
Additional Information: Imported from ISI Web of Science
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 270367
URI: http://eprints.soton.ac.uk/id/eprint/270367
ISSN: 0021-4922
PURE UUID: 2fa3278f-870a-4c72-830b-286b36c46dcf

Catalogue record

Date deposited: 21 Apr 2010 07:46
Last modified: 18 Jul 2017 06:51

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Contributors

Author: T Nagami
Author: Y Tsuchiya
Author: S Saito
Author: T Arai
Author: T Shimada
Author: H Mizuta
Author: S Oda

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