Numerically efficient modelling of CNT transistors with ballistic and non ballistic effects for circuit simulation


Kazmierski, Tom, Zhou, Dafeng, Al-Hashimi, Bashir and Ashburn, Peter (2010) Numerically efficient modelling of CNT transistors with ballistic and non ballistic effects for circuit simulation IEEE Transactions on Nanotechnology, 9, (1), pp. 99-107.

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Description/Abstract

This paper presents an efficient carbon nanotube (CNT) transistor modeling technique which is based on cubic spline approximation of the non-equilibrium mobile charge density. The approximation facilitates the solution of the selfconsistent voltage equation in a carbon nanotube so that calculation of the CNT drain-source current is accelerated by at least two orders of magnitude. A salient feature of the proposed technique is its ability to incorporate both ballistic and nonballistic transport effects without a significant computational cost. The proposed models have been extensively validated against reported CNT ballistic and non-ballistic transport theories and experimental results.

Item Type: Article
Keywords: carbon nanotubes, CNT, ballistic transport, modelling, circuit simulation
Organisations: Nanoelectronics and Nanotechnology, Electronic & Software Systems, EEE
ePrint ID: 270863
Date :
Date Event
January 2010Published
Date Deposited: 20 Apr 2010 23:37
Last Modified: 17 Apr 2017 18:27
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/270863

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