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Numerically efficient modelling of CNT transistors with ballistic and non ballistic effects for circuit simulation

Numerically efficient modelling of CNT transistors with ballistic and non ballistic effects for circuit simulation
Numerically efficient modelling of CNT transistors with ballistic and non ballistic effects for circuit simulation
This paper presents an efficient carbon nanotube (CNT) transistor modeling technique which is based on cubic spline approximation of the non-equilibrium mobile charge density. The approximation facilitates the solution of the selfconsistent voltage equation in a carbon nanotube so that calculation of the CNT drain-source current is accelerated by at least two orders of magnitude. A salient feature of the proposed technique is its ability to incorporate both ballistic and nonballistic transport effects without a significant computational cost. The proposed models have been extensively validated against reported CNT ballistic and non-ballistic transport theories and experimental results.
carbon nanotubes, CNT, ballistic transport, modelling, circuit simulation
99-107
Kazmierski, Tom
a97d7958-40c3-413f-924d-84545216092a
Zhou, Dafeng
fd16a287-48a9-4cfe-983b-f74aa7805d0f
Al-Hashimi, Bashir
0b29c671-a6d2-459c-af68-c4614dce3b5d
Ashburn, Peter
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Kazmierski, Tom
a97d7958-40c3-413f-924d-84545216092a
Zhou, Dafeng
fd16a287-48a9-4cfe-983b-f74aa7805d0f
Al-Hashimi, Bashir
0b29c671-a6d2-459c-af68-c4614dce3b5d
Ashburn, Peter
68cef6b7-205b-47aa-9efb-f1f09f5c1038

Kazmierski, Tom, Zhou, Dafeng, Al-Hashimi, Bashir and Ashburn, Peter (2010) Numerically efficient modelling of CNT transistors with ballistic and non ballistic effects for circuit simulation. IEEE Transactions on Nanotechnology, 9 (1), 99-107.

Record type: Article

Abstract

This paper presents an efficient carbon nanotube (CNT) transistor modeling technique which is based on cubic spline approximation of the non-equilibrium mobile charge density. The approximation facilitates the solution of the selfconsistent voltage equation in a carbon nanotube so that calculation of the CNT drain-source current is accelerated by at least two orders of magnitude. A salient feature of the proposed technique is its ability to incorporate both ballistic and nonballistic transport effects without a significant computational cost. The proposed models have been extensively validated against reported CNT ballistic and non-ballistic transport theories and experimental results.

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More information

Published date: January 2010
Keywords: carbon nanotubes, CNT, ballistic transport, modelling, circuit simulation
Organisations: Nanoelectronics and Nanotechnology, Electronic & Software Systems, EEE

Identifiers

Local EPrints ID: 270863
URI: https://eprints.soton.ac.uk/id/eprint/270863
PURE UUID: 09f5b859-4180-4f39-b3bc-c68ea9db1858

Catalogue record

Date deposited: 20 Apr 2010 23:37
Last modified: 18 Jul 2017 06:50

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Contributors

Author: Tom Kazmierski
Author: Dafeng Zhou
Author: Bashir Al-Hashimi
Author: Peter Ashburn

University divisions

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