Kazmierski, Tom, Zhou, Dafeng, Al-Hashimi, Bashir and Ashburn, Peter
Numerically efficient modelling of CNT transistors with ballistic and non ballistic effects for circuit simulation
IEEE Transactions on Nanotechnology, 9, (1), .
This paper presents an efficient carbon nanotube (CNT) transistor modeling technique which is based on cubic spline approximation of the non-equilibrium mobile charge density. The approximation facilitates the solution of the selfconsistent voltage equation in a carbon nanotube so that calculation of the CNT drain-source current is accelerated by at least two orders of magnitude. A salient feature of the proposed technique is its ability to incorporate both ballistic and nonballistic transport effects without a significant computational cost. The proposed models have been extensively validated against reported CNT ballistic and non-ballistic transport theories and experimental results.
||carbon nanotubes, CNT, ballistic transport, modelling, circuit simulation
||Nanoelectronics and Nanotechnology, Electronic & Software Systems, EEE
||20 Apr 2010 23:37
||17 Apr 2017 18:27
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