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Fe/Ge catalyzed carbon nanotube growth on HfO2 for nanosensor applications

Fe/Ge catalyzed carbon nanotube growth on HfO2 for nanosensor applications
Fe/Ge catalyzed carbon nanotube growth on HfO2 for nanosensor applications
A carbon nanotube (CNT) growth process on Hf02 is reported for the first time for application in nano-sensors, The process uses a combination of Ge nanoparticles and ferric nitrate dispersion and achieves an increase in CNT density from 0.15 to 6.2 µm length/µm2 compared with the use of ferric nitrate dispersion alone. The growth process is validated by the fabrication of back-gate CNT field-effect transistors (CNTFETs) using Al source/drain (SID) contacts and a H2 anneal at 400°C. The transistors exhibit p-FET behavior with an Ion/Ioff ratio of 105 and a steep sub-threshold slope of 130 mY/dec. These results are rather surprising, as earlier research in the literature on CNTFETs with AI S/D electrodes showed n-FET behavior. The p-FET behavior is shown to be due to the H2 anneal, which we ascribe to the smaller electron affinity of hydrogenised CNTs. Measurements of the temperature dependence of the drain current show low Schottky barrier height Al S/D contacts after a H2 anneal, which tends to confirm this explanation.
carbon nanotubes, FET
Uchino, T.
706196b8-2f2c-403d-97aa-2995eac8572b
Ayre, G.N.
0a7c003b-00c1-4412-bd40-03005e7310c2
Smith, D.C.
536ad98e-9c71-4171-a7b5-51d796090e5d
Hutchison, J.L.
65f59105-495d-42a5-9c51-b62c82c3044e
de Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Uchino, T.
706196b8-2f2c-403d-97aa-2995eac8572b
Ayre, G.N.
0a7c003b-00c1-4412-bd40-03005e7310c2
Smith, D.C.
536ad98e-9c71-4171-a7b5-51d796090e5d
Hutchison, J.L.
65f59105-495d-42a5-9c51-b62c82c3044e
de Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038

Uchino, T., Ayre, G.N., Smith, D.C., Hutchison, J.L., de Groot, C.H. and Ashburn, P. (2009) Fe/Ge catalyzed carbon nanotube growth on HfO2 for nanosensor applications. IEEE Solid State Devices & Materials (SSDM) Conference, Miyagi, Japan. 07 - 09 Oct 2009.

Record type: Conference or Workshop Item (Other)

Abstract

A carbon nanotube (CNT) growth process on Hf02 is reported for the first time for application in nano-sensors, The process uses a combination of Ge nanoparticles and ferric nitrate dispersion and achieves an increase in CNT density from 0.15 to 6.2 µm length/µm2 compared with the use of ferric nitrate dispersion alone. The growth process is validated by the fabrication of back-gate CNT field-effect transistors (CNTFETs) using Al source/drain (SID) contacts and a H2 anneal at 400°C. The transistors exhibit p-FET behavior with an Ion/Ioff ratio of 105 and a steep sub-threshold slope of 130 mY/dec. These results are rather surprising, as earlier research in the literature on CNTFETs with AI S/D electrodes showed n-FET behavior. The p-FET behavior is shown to be due to the H2 anneal, which we ascribe to the smaller electron affinity of hydrogenised CNTs. Measurements of the temperature dependence of the drain current show low Schottky barrier height Al S/D contacts after a H2 anneal, which tends to confirm this explanation.

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More information

Published date: October 2009
Additional Information: Event Dates: 7-9 October
Venue - Dates: IEEE Solid State Devices & Materials (SSDM) Conference, Miyagi, Japan, 2009-10-07 - 2009-10-09
Keywords: carbon nanotubes, FET
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 270870
URI: https://eprints.soton.ac.uk/id/eprint/270870
PURE UUID: 2b102ceb-8dd8-4b84-80fc-4db94c87708e
ORCID for C.H. de Groot: ORCID iD orcid.org/0000-0002-3850-7101

Catalogue record

Date deposited: 21 Apr 2010 02:35
Last modified: 04 Jul 2018 00:33

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Contributors

Author: T. Uchino
Author: G.N. Ayre
Author: D.C. Smith
Author: J.L. Hutchison
Author: C.H. de Groot ORCID iD
Author: P. Ashburn

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