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A novel method for nanoprecision alignment in wafer bonding applications

Record type: Article

Wafer bonding has been identified as a promising technique to enable fabrication of many advanced semiconductor devices such as three-dimensional integrated circuits (3D IC) and micro/nano systems. However, with the device dimensions already in the nanometre range, the lack of approaches to achieve high precision bonding alignment has restricted many applications. With this increasing demand for wafer bonding applications, a novel mechanical passive alignment technique is described in this work aiming at nanoprecision alignment based on kinematic and elastic averaging effects. A number of cantilever-supported pyramid and V-pit microstructures have been incorporated into the outer circumference area of the to-be-bonded Si chips, respectively. The engagement between the convex pyramids and concave V-pits and the compliance of the support cantilever flexures result in micromechanical passive alignment which is followed by direct bonding between the Si chips. The subsequent infrared ...

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Citation

Jiang, Liudi, Pandraud, G, French, P J, Spearing, S M and Kraft, Michael (2007) A novel method for nanoprecision alignment in wafer bonding applications J.Micromech Microeng, 17, (7), S61-S67.

More information

Published date: 2007
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 270903
URI: http://eprints.soton.ac.uk/id/eprint/270903
PURE UUID: f0590b52-3ecf-4bdd-b234-aa24ce4f1826

Catalogue record

Date deposited: 22 Apr 2010 09:51
Last modified: 18 Jul 2017 06:50

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Contributors

Author: Liudi Jiang
Author: G Pandraud
Author: P J French
Author: S M Spearing
Author: Michael Kraft

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