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A novel method for nanoprecision alignment in wafer bonding applications

A novel method for nanoprecision alignment in wafer bonding applications
A novel method for nanoprecision alignment in wafer bonding applications
Wafer bonding has been identified as a promising technique to enable fabrication of many advanced semiconductor devices such as three dimensional integrated circuits (3D IC) and micro/nano systems. However, with the device dimensions already in the nanometer range, the lack of approaches to achieve high precision bonding alignment has restricted many applications. With this increasing demand for wafer bonding applications, a novel mechanical passive alignment technique is described in this work aiming at nanoprecision alignment based on kinematic and elastic averaging effects. A number of cantilever supported pyramid and V-pit microstructures have been incorporated into the outer circumference area of the to-be-bonded Si chips, respectively. The engagement between the convex pyramids and concave V-pits and the compliance of the support cantilever flexures result in micromechanical passive alignment which is followed by direct bonding between the Si chips. The subsequent infrared (IR) and scanning electron microscopy (SEM) inspections repeatedly confirmed the achievement of the alignment accuracy of better than 200nm at the bonding interface with good bonding quality. The impact and potential applications of the developed alignment technique are also discussed.
S61-S67
Jiang, Liudi
374f2414-51f0-418f-a316-e7db0d6dc4d1
Pandraud, G.
f9d14cad-3fe1-4e54-a397-87c218769501
French, P.J.
10c75469-53aa-449c-b8d6-9ef444b697b7
Spearing, S.M.
9e56a7b3-e0e8-47b1-a6b4-db676ed3c17a
Kraft, M.
54927621-738f-4d40-af56-a027f686b59f
Jiang, Liudi
374f2414-51f0-418f-a316-e7db0d6dc4d1
Pandraud, G.
f9d14cad-3fe1-4e54-a397-87c218769501
French, P.J.
10c75469-53aa-449c-b8d6-9ef444b697b7
Spearing, S.M.
9e56a7b3-e0e8-47b1-a6b4-db676ed3c17a
Kraft, M.
54927621-738f-4d40-af56-a027f686b59f

Jiang, Liudi, Pandraud, G., French, P.J., Spearing, S.M. and Kraft, M. (2007) A novel method for nanoprecision alignment in wafer bonding applications. Journal of Micromechanics and Microengineering, 17 (7), S61-S67. (doi:10.1088/0960-1317/17/7/S01).

Record type: Article

Abstract

Wafer bonding has been identified as a promising technique to enable fabrication of many advanced semiconductor devices such as three dimensional integrated circuits (3D IC) and micro/nano systems. However, with the device dimensions already in the nanometer range, the lack of approaches to achieve high precision bonding alignment has restricted many applications. With this increasing demand for wafer bonding applications, a novel mechanical passive alignment technique is described in this work aiming at nanoprecision alignment based on kinematic and elastic averaging effects. A number of cantilever supported pyramid and V-pit microstructures have been incorporated into the outer circumference area of the to-be-bonded Si chips, respectively. The engagement between the convex pyramids and concave V-pits and the compliance of the support cantilever flexures result in micromechanical passive alignment which is followed by direct bonding between the Si chips. The subsequent infrared (IR) and scanning electron microscopy (SEM) inspections repeatedly confirmed the achievement of the alignment accuracy of better than 200nm at the bonding interface with good bonding quality. The impact and potential applications of the developed alignment technique are also discussed.

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More information

Published date: June 2007
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 270903
URI: http://eprints.soton.ac.uk/id/eprint/270903
PURE UUID: f0590b52-3ecf-4bdd-b234-aa24ce4f1826
ORCID for Liudi Jiang: ORCID iD orcid.org/0000-0002-3400-825X
ORCID for S.M. Spearing: ORCID iD orcid.org/0000-0002-3059-2014

Catalogue record

Date deposited: 22 Apr 2010 09:51
Last modified: 15 Mar 2024 03:24

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Contributors

Author: Liudi Jiang ORCID iD
Author: G. Pandraud
Author: P.J. French
Author: S.M. Spearing ORCID iD
Author: M. Kraft

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