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Studies of the photonic and optical-frequency phonon properties of arrays of selectively grown micropyramids

Studies of the photonic and optical-frequency phonon properties of arrays of selectively grown micropyramids
Studies of the photonic and optical-frequency phonon properties of arrays of selectively grown micropyramids
An array of GaN micropyramids containing a near-surface InxGa1?xN/GaN single quantum well has been fabricated using selective area epitaxial overgrowth above a patterned silica mask. The pyramid array has been studied by means of angle-resolved reflection measurements using s- and p-polarized incident light in the near- and mid-infrared optical ranges. We have found that the periodic array of flat-topped pyramids shows marked resonances in the near-infrared optical range due to resonant Bloch modes within the extraction cone and that the angular dispersion of these modes exhibits strong photonic crystal characteristics. The experimental results are in good agreement with the photonic band structure calculated using a scattering matrix formalism. The mid-infrared optical anisotropy properties of the micropyramids were investigated to probe the infrared active phonons of the pyramid array. The A1?LO? phonon of the InxGa1?xN/GaN single quantum well was identified and the InN mole fraction was estimated from the mode behavior.
0021-8979
044910-1
Coquillat, D
19fcb49f-f0ee-42dd-b92d-48f600824ec3
Le Vassor d’Yerville, M
6f503e7b-9842-46ab-8c5a-920b298f4281
Kazan, M
106b84ee-1213-4911-8923-a7836d198978
Liu, C
3f45f2cc-6d0e-4d70-b332-e701056cf400
Watson, I. M.
914c1209-93c0-4708-8d93-8bba31b52ef1
Edwards, P. R.
2d1ee6c9-21c1-4dc2-9b56-9bfa8a07717d
Martin, R. W.
2b838c8c-af70-4c21-9ab0-68c90fe11bda
Chong, H. M. H.
795aa67f-29e5-480f-b1bc-9bd5c0d558e1
De La Rue, R. M.
60db4667-fdca-4399-ab8e-9dd119513d8b
Coquillat, D
19fcb49f-f0ee-42dd-b92d-48f600824ec3
Le Vassor d’Yerville, M
6f503e7b-9842-46ab-8c5a-920b298f4281
Kazan, M
106b84ee-1213-4911-8923-a7836d198978
Liu, C
3f45f2cc-6d0e-4d70-b332-e701056cf400
Watson, I. M.
914c1209-93c0-4708-8d93-8bba31b52ef1
Edwards, P. R.
2d1ee6c9-21c1-4dc2-9b56-9bfa8a07717d
Martin, R. W.
2b838c8c-af70-4c21-9ab0-68c90fe11bda
Chong, H. M. H.
795aa67f-29e5-480f-b1bc-9bd5c0d558e1
De La Rue, R. M.
60db4667-fdca-4399-ab8e-9dd119513d8b

Coquillat, D, Le Vassor d’Yerville, M, Kazan, M, Liu, C, Watson, I. M., Edwards, P. R., Martin, R. W., Chong, H. M. H. and De La Rue, R. M. (2008) Studies of the photonic and optical-frequency phonon properties of arrays of selectively grown micropyramids. Journal of Applied Physics, 103, 044910-1.

Record type: Article

Abstract

An array of GaN micropyramids containing a near-surface InxGa1?xN/GaN single quantum well has been fabricated using selective area epitaxial overgrowth above a patterned silica mask. The pyramid array has been studied by means of angle-resolved reflection measurements using s- and p-polarized incident light in the near- and mid-infrared optical ranges. We have found that the periodic array of flat-topped pyramids shows marked resonances in the near-infrared optical range due to resonant Bloch modes within the extraction cone and that the angular dispersion of these modes exhibits strong photonic crystal characteristics. The experimental results are in good agreement with the photonic band structure calculated using a scattering matrix formalism. The mid-infrared optical anisotropy properties of the micropyramids were investigated to probe the infrared active phonons of the pyramid array. The A1?LO? phonon of the InxGa1?xN/GaN single quantum well was identified and the InN mole fraction was estimated from the mode behavior.

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STUDIES_OF_THE_PHOTONIC_AND_OPTICAL_FREQUENCY_PHONON_PROPERTIES_OF_ARRYAS_OF_SELECTIVELY_GROWN_GAN_MICROPYRAMIDS.pdf - Version of Record
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Published date: 2008
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 271016
URI: https://eprints.soton.ac.uk/id/eprint/271016
ISSN: 0021-8979
PURE UUID: 65dba21f-5175-4525-b82c-ee4c2feb4034
ORCID for H. M. H. Chong: ORCID iD orcid.org/0000-0002-7110-5761

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Date deposited: 06 May 2010 18:12
Last modified: 06 Jun 2018 12:37

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