Polycrystalline silicon nanowires patterned by top-down lithography for biosensor applications

Sun, K., Hakim, M.M.A., Kong, J., de Planque, M.R.R., Morgan, H., Roach, P.L., Davies, D.E., Howarth, P. and Ashburn, P. (2010) Polycrystalline silicon nanowires patterned by top-down lithography for biosensor applications. The 36th International Conferenece on Micro & nano Engineering, Genoa, Itlay. 19 - 22 Sep 2010.

Abstract

Recently, Si nanowires are receiving much attention for biosensing because they offer the prospect of realtime, label-free, high sensitivity sensing. The most popular approach to silicon nanowire fabrication uses electron-beam lithography to pattern silicon nanowires on SOI wafers. While this approach has the advantage of CMOS-compatibility, it has the disadvantage of high cost, because both the lithography and the SOI wafers are expensive. Recently, spacer nanowires patterned by a conventional anisotropic dry etch were used to form transistors, which tends to give a triangular shape. In this paper, we demonstrate a low cost, CMOS-compatible fabrication process of polycrystalline silicon nanowires for biosensor applications using a Bosch dry etch process. The nanowires produced in this way have a rectangular shape, which gives good control over the nanowire width -height and electrical characteristics.

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Contributors

Author: K. Sun

Author: M.R.R. de Planque

Author: H. Morgan

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