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Polycrystalline silicon nanowires patterned by top-down lithography for biosensor applications

Polycrystalline silicon nanowires patterned by top-down lithography for biosensor applications
Polycrystalline silicon nanowires patterned by top-down lithography for biosensor applications
Recently, Si nanowires are receiving much attention for biosensing because they offer the prospect of realtime, label-free, high sensitivity sensing. The most popular approach to silicon nanowire fabrication uses electron-beam lithography to pattern silicon nanowires on SOI wafers. While this approach has the advantage of CMOS-compatibility, it has the disadvantage of high cost, because both the lithography and the SOI wafers are expensive. Recently, spacer nanowires patterned by a conventional anisotropic dry etch were used to form transistors, which tends to give a triangular shape. In this paper, we demonstrate a low cost, CMOS-compatible fabrication process of polycrystalline silicon nanowires for biosensor applications using a Bosch dry etch process. The nanowires produced in this way have a rectangular shape, which gives good control over the nanowire width -height and electrical characteristics.
nanowire, polysilicon, biosensor
Sun, K.
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Hakim, M.M.A.
e584d902-b647-49eb-85bf-15446c06652a
Kong, J.
73aeceb9-1ddb-4b31-b1d0-eb2fe9fe07c3
de Planque, M.R.R.
a1d33d13-f516-44fb-8d2c-c51d18bc21ba
Morgan, H.
de00d59f-a5a2-48c4-a99a-1d5dd7854174
Roach, P.L.
2515e8a9-9915-43cb-aec1-47c3230b03a5
Davies, D.E.
b8f2ce98-6b03-4c73-9619-44878cd9a77b
Howarth, P.
ceac6974-7990-4780-a334-62d8c924c3e5
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Sun, K.
b7c648a3-7be8-4613-9d4d-1bf937fb487b
Hakim, M.M.A.
e584d902-b647-49eb-85bf-15446c06652a
Kong, J.
73aeceb9-1ddb-4b31-b1d0-eb2fe9fe07c3
de Planque, M.R.R.
a1d33d13-f516-44fb-8d2c-c51d18bc21ba
Morgan, H.
de00d59f-a5a2-48c4-a99a-1d5dd7854174
Roach, P.L.
2515e8a9-9915-43cb-aec1-47c3230b03a5
Davies, D.E.
b8f2ce98-6b03-4c73-9619-44878cd9a77b
Howarth, P.
ceac6974-7990-4780-a334-62d8c924c3e5
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038

Sun, K., Hakim, M.M.A., Kong, J., de Planque, M.R.R., Morgan, H., Roach, P.L., Davies, D.E., Howarth, P. and Ashburn, P. (2010) Polycrystalline silicon nanowires patterned by top-down lithography for biosensor applications. The 36th International Conferenece on Micro & nano Engineering, Genoa, Itlay. 19 - 22 Sep 2010.

Record type: Conference or Workshop Item (Other)

Abstract

Recently, Si nanowires are receiving much attention for biosensing because they offer the prospect of realtime, label-free, high sensitivity sensing. The most popular approach to silicon nanowire fabrication uses electron-beam lithography to pattern silicon nanowires on SOI wafers. While this approach has the advantage of CMOS-compatibility, it has the disadvantage of high cost, because both the lithography and the SOI wafers are expensive. Recently, spacer nanowires patterned by a conventional anisotropic dry etch were used to form transistors, which tends to give a triangular shape. In this paper, we demonstrate a low cost, CMOS-compatible fabrication process of polycrystalline silicon nanowires for biosensor applications using a Bosch dry etch process. The nanowires produced in this way have a rectangular shape, which gives good control over the nanowire width -height and electrical characteristics.

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More information

Published date: 19 September 2010
Venue - Dates: The 36th International Conferenece on Micro & nano Engineering, Genoa, Itlay, 2010-09-19 - 2010-09-22
Keywords: nanowire, polysilicon, biosensor
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 271588
URI: http://eprints.soton.ac.uk/id/eprint/271588
PURE UUID: 6ad1ccc6-4f91-4274-8396-7a8b01b66aca
ORCID for M.R.R. de Planque: ORCID iD orcid.org/0000-0002-8787-0513
ORCID for H. Morgan: ORCID iD orcid.org/0000-0003-4850-5676

Catalogue record

Date deposited: 24 Sep 2010 11:22
Last modified: 07 Dec 2023 02:37

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Contributors

Author: K. Sun
Author: M.M.A. Hakim
Author: J. Kong
Author: M.R.R. de Planque ORCID iD
Author: H. Morgan ORCID iD
Author: P.L. Roach
Author: D.E. Davies
Author: P. Howarth
Author: P. Ashburn

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