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Polycrystalline Silicon Nanowires Patterned by Top-Down Lithography for Biosensor Applications

Polycrystalline Silicon Nanowires Patterned by Top-Down Lithography for Biosensor Applications
Polycrystalline Silicon Nanowires Patterned by Top-Down Lithography for Biosensor Applications
Recently, Si nanowires are receiving much attention for biosensing because they offer the prospect of realtime, label-free, high sensitivity sensing. The most popular approach to silicon nanowire fabrication uses electron-beam lithography to pattern silicon nanowires on SOI wafers. While this approach has the advantage of CMOS-compatibility, it has the disadvantage of high cost, because both the lithography and the SOI wafers are expensive. Recently, spacer nanowires patterned by a conventional anisotropic dry etch were used to form transistors, which tends to give a triangular shape. In this paper, we demonstrate a low cost, CMOS-compatible fabrication process of polycrystalline silicon nanowires for biosensor applications using a Bosch dry etch process. The nanowires produced in this way have a rectangular shape, which gives good control over the nanowire width -height and electrical characteristics.
Kai, Sun
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Hakim, M. M. A.
a3ec2cf3-d89c-4ec5-a66f-e718fba3a52d
Kong, J.
73aeceb9-1ddb-4b31-b1d0-eb2fe9fe07c3
Planque, M. R. R. de
93916ade-d087-463a-8387-1c7d9ae92086
Morgan, H.
3b183852-ea5a-4447-a049-ee3d6e19f022
Roach, P. L.
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Davis, D. E.
db1bdd3d-400f-4184-9a3f-3a5cc769a17c
Howarth, P.
ceac6974-7990-4780-a334-62d8c924c3e5
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Kai, Sun
51554533-1e5d-46cf-a62b-d46df4b81a37
Hakim, M. M. A.
a3ec2cf3-d89c-4ec5-a66f-e718fba3a52d
Kong, J.
73aeceb9-1ddb-4b31-b1d0-eb2fe9fe07c3
Planque, M. R. R. de
93916ade-d087-463a-8387-1c7d9ae92086
Morgan, H.
3b183852-ea5a-4447-a049-ee3d6e19f022
Roach, P. L.
41af1c64-d925-472f-af2b-63e8a2eb342b
Davis, D. E.
db1bdd3d-400f-4184-9a3f-3a5cc769a17c
Howarth, P.
ceac6974-7990-4780-a334-62d8c924c3e5
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038

Kai, Sun, Hakim, M. M. A., Kong, J., Planque, M. R. R. de, Morgan, H., Roach, P. L., Davis, D. E., Howarth, P. and Ashburn, P. (2010) Polycrystalline Silicon Nanowires Patterned by Top-Down Lithography for Biosensor Applications At The 36th International Conferenece on Micro & nano Engineering. 19 - 22 Sep 2010.

Record type: Conference or Workshop Item (Other)

Abstract

Recently, Si nanowires are receiving much attention for biosensing because they offer the prospect of realtime, label-free, high sensitivity sensing. The most popular approach to silicon nanowire fabrication uses electron-beam lithography to pattern silicon nanowires on SOI wafers. While this approach has the advantage of CMOS-compatibility, it has the disadvantage of high cost, because both the lithography and the SOI wafers are expensive. Recently, spacer nanowires patterned by a conventional anisotropic dry etch were used to form transistors, which tends to give a triangular shape. In this paper, we demonstrate a low cost, CMOS-compatible fabrication process of polycrystalline silicon nanowires for biosensor applications using a Bosch dry etch process. The nanowires produced in this way have a rectangular shape, which gives good control over the nanowire width -height and electrical characteristics.

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More information

Published date: 19 September 2010
Additional Information: Event Dates: September 19-22
Venue - Dates: The 36th International Conferenece on Micro & nano Engineering, 2010-09-19 - 2010-09-22
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 271588
URI: http://eprints.soton.ac.uk/id/eprint/271588
PURE UUID: 6ad1ccc6-4f91-4274-8396-7a8b01b66aca

Catalogue record

Date deposited: 24 Sep 2010 11:22
Last modified: 18 Jul 2017 06:40

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Contributors

Author: Sun Kai
Author: M. M. A. Hakim
Author: J. Kong
Author: M. R. R. de Planque
Author: H. Morgan
Author: P. L. Roach
Author: D. E. Davis
Author: P. Howarth
Author: P. Ashburn

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