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Low cost nanowire biosensor fabrication using thin film amorphous silicon crystallisation technologies

Low cost nanowire biosensor fabrication using thin film amorphous silicon crystallisation technologies
Low cost nanowire biosensor fabrication using thin film amorphous silicon crystallisation technologies
Recently, Si nanowires are receiving much attention for biosensing because they offer the prospect of real-time, label-free, high sensitivity sensing. The most popular approach to silicon nanowire fabrication uses electron-beam lithography to define silicon nanowires on SOI wafers. While this approach has the advantage of CMOS-compatibility, it has the disadvantage of high cost, because both the lithography and the SOI wafers are expensive. In this paper we demonstrate a low cost, CMOS-compatible fabrication process for silicon nanowire biosensors, which is based on thin film transistor technology. The key steps in the fabrication process are the deposition of an amorphous Si layer over a sharp step in an insulating film and an anisotropic Si etch to create a silicon nanowire on the side of the step. The anisotropic etch was performed on an ICP etcher using the Bosch process, which gives well-defined, rectangular amorphous silicon nanowires with a geometry of 80 x 120 nm, measured by cross-sectional SEM. Metal induced lateral crystallization is then used to crystallize the amorphous silicon at a temperature around 500°C to create polycrystalline silicon nanowires. The approach used for nanowire functionalisation produces a maleimide activated surface that is amenable to the immobilization of biomolecules with a free thiol.
Sun, Kai
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Hakim, M.M.A.
e584d902-b647-49eb-85bf-15446c06652a
Kong, J.
73aeceb9-1ddb-4b31-b1d0-eb2fe9fe07c3
de Planque, M.R.R.
a1d33d13-f516-44fb-8d2c-c51d18bc21ba
Morgan, H.
de00d59f-a5a2-48c4-a99a-1d5dd7854174
Roach, P.L.
ca94060c-4443-482b-af3e-979243488ba9
Davies, D.E.
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Howarth, P.
ff19c8c4-86b0-4a88-8f76-b3d87f142a21
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Sun, Kai
b7c648a3-7be8-4613-9d4d-1bf937fb487b
Hakim, M.M.A.
e584d902-b647-49eb-85bf-15446c06652a
Kong, J.
73aeceb9-1ddb-4b31-b1d0-eb2fe9fe07c3
de Planque, M.R.R.
a1d33d13-f516-44fb-8d2c-c51d18bc21ba
Morgan, H.
de00d59f-a5a2-48c4-a99a-1d5dd7854174
Roach, P.L.
ca94060c-4443-482b-af3e-979243488ba9
Davies, D.E.
7de8fdc7-3640-4e3a-aa91-d0e03f990c38
Howarth, P.
ff19c8c4-86b0-4a88-8f76-b3d87f142a21
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038

Sun, Kai, Hakim, M.M.A., Kong, J., de Planque, M.R.R., Morgan, H., Roach, P.L., Davies, D.E., Howarth, P. and Ashburn, P. (2010) Low cost nanowire biosensor fabrication using thin film amorphous silicon crystallisation technologies. IDRN, Leceister, United Kingdom. 14 May 2010.

Record type: Conference or Workshop Item (Poster)

Abstract

Recently, Si nanowires are receiving much attention for biosensing because they offer the prospect of real-time, label-free, high sensitivity sensing. The most popular approach to silicon nanowire fabrication uses electron-beam lithography to define silicon nanowires on SOI wafers. While this approach has the advantage of CMOS-compatibility, it has the disadvantage of high cost, because both the lithography and the SOI wafers are expensive. In this paper we demonstrate a low cost, CMOS-compatible fabrication process for silicon nanowire biosensors, which is based on thin film transistor technology. The key steps in the fabrication process are the deposition of an amorphous Si layer over a sharp step in an insulating film and an anisotropic Si etch to create a silicon nanowire on the side of the step. The anisotropic etch was performed on an ICP etcher using the Bosch process, which gives well-defined, rectangular amorphous silicon nanowires with a geometry of 80 x 120 nm, measured by cross-sectional SEM. Metal induced lateral crystallization is then used to crystallize the amorphous silicon at a temperature around 500°C to create polycrystalline silicon nanowires. The approach used for nanowire functionalisation produces a maleimide activated surface that is amenable to the immobilization of biomolecules with a free thiol.

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More information

Published date: 14 May 2010
Venue - Dates: IDRN, Leceister, United Kingdom, 2010-05-14 - 2010-05-14
Organisations: Chemistry, Faculty of Medicine, Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 271589
URI: http://eprints.soton.ac.uk/id/eprint/271589
PURE UUID: ce8fe27e-4be8-4444-a237-b767a0497728
ORCID for Kai Sun: ORCID iD orcid.org/0000-0001-6807-6253
ORCID for M.R.R. de Planque: ORCID iD orcid.org/0000-0002-8787-0513
ORCID for H. Morgan: ORCID iD orcid.org/0000-0003-4850-5676
ORCID for P.L. Roach: ORCID iD orcid.org/0000-0001-9880-2877
ORCID for D.E. Davies: ORCID iD orcid.org/0000-0002-5117-2991

Catalogue record

Date deposited: 24 Sep 2010 11:31
Last modified: 15 Jun 2024 01:42

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Contributors

Author: Kai Sun ORCID iD
Author: M.M.A. Hakim
Author: J. Kong
Author: M.R.R. de Planque ORCID iD
Author: H. Morgan ORCID iD
Author: P.L. Roach ORCID iD
Author: D.E. Davies ORCID iD
Author: P. Howarth
Author: P. Ashburn

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