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Recrystallised Si Nanofingers and Nanowires for Low Cost Biosensor Applications

Recrystallised Si Nanofingers and Nanowires for Low Cost Biosensor Applications
Recrystallised Si Nanofingers and Nanowires for Low Cost Biosensor Applications
Recently, Si nanowires and micron-wide nanoribbons are gaining much attention for biosensing because they offer real-time, label-free, high sensitivity sensing. Currently Si nanowires are fabricated using CMOS technology, SOI substrates and e-beam lithography, which give high costs. In this paper we investigate a lower cost alternative using TFT technology and study the lateral crystallization of Si nanoribbons for application in Si biosensors. A comparison is made of the crystallization of a-Si on SiO2 and on air for use in top-gate and surround-gate sensors. The crystallization is assessed using Normarski microscopy, planar and cross-sectional SEM and defect etching. The results show better lateral crystallization for Si-on-Air than Si-on-Oxide. For a 10h anneal at 550°C, the crystallization extended 24um for Si-on-Air and 11um for Si-on-SiO2, whilst a 20h anneal at 525°C gives 7.7um and 4.9um respectively. Plan-view SEM images also show slightly lower NiSi2 precipitates in Si-on-Air than Si-on-Oxide. Cross-section SEM images show randomly nucleated grains at the bottom of the crystallized layer, with a density of 1.3/um and 3.2/um for Si-on-Air and Si-on-Oxide, indicating the suppression of random grain nucleation in Si-on-Air samples. These results promise better electrical performance from crystallized Si-on-Air sensors than Si-on-Oxide sensors.
Kai, Sun
51554533-1e5d-46cf-a62b-d46df4b81a37
Hakim, M. M. A.
a3ec2cf3-d89c-4ec5-a66f-e718fba3a52d
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Kai, Sun
51554533-1e5d-46cf-a62b-d46df4b81a37
Hakim, M. M. A.
a3ec2cf3-d89c-4ec5-a66f-e718fba3a52d
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038

Kai, Sun, Hakim, M. M. A. and Ashburn, P. (2010) Recrystallised Si Nanofingers and Nanowires for Low Cost Biosensor Applications At International Symposium on Atom-scale Si Hybrid Nanotechnologies, United Kingdom. 01 - 02 Mar 2010.

Record type: Conference or Workshop Item (Poster)

Abstract

Recently, Si nanowires and micron-wide nanoribbons are gaining much attention for biosensing because they offer real-time, label-free, high sensitivity sensing. Currently Si nanowires are fabricated using CMOS technology, SOI substrates and e-beam lithography, which give high costs. In this paper we investigate a lower cost alternative using TFT technology and study the lateral crystallization of Si nanoribbons for application in Si biosensors. A comparison is made of the crystallization of a-Si on SiO2 and on air for use in top-gate and surround-gate sensors. The crystallization is assessed using Normarski microscopy, planar and cross-sectional SEM and defect etching. The results show better lateral crystallization for Si-on-Air than Si-on-Oxide. For a 10h anneal at 550°C, the crystallization extended 24um for Si-on-Air and 11um for Si-on-SiO2, whilst a 20h anneal at 525°C gives 7.7um and 4.9um respectively. Plan-view SEM images also show slightly lower NiSi2 precipitates in Si-on-Air than Si-on-Oxide. Cross-section SEM images show randomly nucleated grains at the bottom of the crystallized layer, with a density of 1.3/um and 3.2/um for Si-on-Air and Si-on-Oxide, indicating the suppression of random grain nucleation in Si-on-Air samples. These results promise better electrical performance from crystallized Si-on-Air sensors than Si-on-Oxide sensors.

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More information

Published date: 1 March 2010
Additional Information: Event Dates: 1-2 March
Venue - Dates: International Symposium on Atom-scale Si Hybrid Nanotechnologies, United Kingdom, 2010-03-01 - 2010-03-02
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 271591
URI: http://eprints.soton.ac.uk/id/eprint/271591
PURE UUID: f1c9f7d0-b757-4244-a183-6b48ef660362

Catalogue record

Date deposited: 24 Sep 2010 13:16
Last modified: 18 Jul 2017 06:40

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Contributors

Author: Sun Kai
Author: M. M. A. Hakim
Author: P. Ashburn

University divisions

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