Magneto-resistance in a lithography defined single constrained domain wall spin valve
Magneto-resistance in a lithography defined single constrained domain wall spin valve
We have measured domain wall magnetoresistance in a single lithographically constrained domain wall. An H-shaped Ni nano-bridge was fabricated by e-beam lithography with the two sides being single magnetic do- mains showing independent magnetic switching. The connection between the sides constraining the domain wall when the sides line up anti-parallel. The magneto-resistance curve clearly identifies the magnetic con- figurations that are expected from a spin valve-like structure. The value of the magneto-resistance at room temperature is around 0.1% or 0.4 . This value is shown to be in agreement with a theoretical formulation based on spin accumulation. Micromagnetic simulations show it is possible to reduce the size of the domain wall further by shortening the length of the bridge.
262501-262503
Wang, Yudong
c48bcc7c-4cb4-468c-af4e-d1e601222009
Claudio-Gonzalez, D.
1f1b5294-04bb-4dea-ba48-a76ca92b4d49
Fangohr, H.
9b7cfab9-d5dc-45dc-947c-2eba5c81a160
de Groot, Kees
92cd2e02-fcc4-43da-8816-c86f966be90c
December 2010
Wang, Yudong
c48bcc7c-4cb4-468c-af4e-d1e601222009
Claudio-Gonzalez, D.
1f1b5294-04bb-4dea-ba48-a76ca92b4d49
Fangohr, H.
9b7cfab9-d5dc-45dc-947c-2eba5c81a160
de Groot, Kees
92cd2e02-fcc4-43da-8816-c86f966be90c
Wang, Yudong, Claudio-Gonzalez, D., Fangohr, H. and de Groot, Kees
(2010)
Magneto-resistance in a lithography defined single constrained domain wall spin valve.
Applied Physics Letters, 97, .
(doi:10.1063/1.3531666).
Abstract
We have measured domain wall magnetoresistance in a single lithographically constrained domain wall. An H-shaped Ni nano-bridge was fabricated by e-beam lithography with the two sides being single magnetic do- mains showing independent magnetic switching. The connection between the sides constraining the domain wall when the sides line up anti-parallel. The magneto-resistance curve clearly identifies the magnetic con- figurations that are expected from a spin valve-like structure. The value of the magneto-resistance at room temperature is around 0.1% or 0.4 . This value is shown to be in agreement with a theoretical formulation based on spin accumulation. Micromagnetic simulations show it is possible to reduce the size of the domain wall further by shortening the length of the bridge.
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Wang_APL_DWMR_accepted.pdf
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Published date: December 2010
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 271789
URI: http://eprints.soton.ac.uk/id/eprint/271789
ISSN: 0003-6951
PURE UUID: 211e03d5-ac76-4dc5-add0-dd8f2fd597fc
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Date deposited: 15 Dec 2010 11:26
Last modified: 15 Mar 2024 03:11
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Author:
Yudong Wang
Author:
D. Claudio-Gonzalez
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