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Magneto-resistance in a lithography defined single constrained domain wall spin valve

Magneto-resistance in a lithography defined single constrained domain wall spin valve
Magneto-resistance in a lithography defined single constrained domain wall spin valve
We have measured domain wall magnetoresistance in a single lithographically constrained domain wall. An H-shaped Ni nano-bridge was fabricated by e-beam lithography with the two sides being single magnetic do- mains showing independent magnetic switching. The connection between the sides constraining the domain wall when the sides line up anti-parallel. The magneto-resistance curve clearly identifies the magnetic con- figurations that are expected from a spin valve-like structure. The value of the magneto-resistance at room temperature is around 0.1% or 0.4 ­. This value is shown to be in agreement with a theoretical formulation based on spin accumulation. Micromagnetic simulations show it is possible to reduce the size of the domain wall further by shortening the length of the bridge.
0003-6951
262501-262503
Wang, Yudong
c48bcc7c-4cb4-468c-af4e-d1e601222009
Claudio-Gonzalez, D.
1f1b5294-04bb-4dea-ba48-a76ca92b4d49
Fangohr, H.
9b7cfab9-d5dc-45dc-947c-2eba5c81a160
de Groot, Kees
92cd2e02-fcc4-43da-8816-c86f966be90c
Wang, Yudong
c48bcc7c-4cb4-468c-af4e-d1e601222009
Claudio-Gonzalez, D.
1f1b5294-04bb-4dea-ba48-a76ca92b4d49
Fangohr, H.
9b7cfab9-d5dc-45dc-947c-2eba5c81a160
de Groot, Kees
92cd2e02-fcc4-43da-8816-c86f966be90c

Wang, Yudong, Claudio-Gonzalez, D., Fangohr, H. and de Groot, Kees (2010) Magneto-resistance in a lithography defined single constrained domain wall spin valve. Applied Physics Letters, 97, 262501-262503. (doi:10.1063/1.3531666).

Record type: Article

Abstract

We have measured domain wall magnetoresistance in a single lithographically constrained domain wall. An H-shaped Ni nano-bridge was fabricated by e-beam lithography with the two sides being single magnetic do- mains showing independent magnetic switching. The connection between the sides constraining the domain wall when the sides line up anti-parallel. The magneto-resistance curve clearly identifies the magnetic con- figurations that are expected from a spin valve-like structure. The value of the magneto-resistance at room temperature is around 0.1% or 0.4 ­. This value is shown to be in agreement with a theoretical formulation based on spin accumulation. Micromagnetic simulations show it is possible to reduce the size of the domain wall further by shortening the length of the bridge.

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Published date: December 2010
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 271789
URI: http://eprints.soton.ac.uk/id/eprint/271789
ISSN: 0003-6951
PURE UUID: 211e03d5-ac76-4dc5-add0-dd8f2fd597fc
ORCID for H. Fangohr: ORCID iD orcid.org/0000-0001-5494-7193
ORCID for Kees de Groot: ORCID iD orcid.org/0000-0002-3850-7101

Catalogue record

Date deposited: 15 Dec 2010 11:26
Last modified: 21 Nov 2019 01:37

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Contributors

Author: Yudong Wang
Author: D. Claudio-Gonzalez
Author: H. Fangohr ORCID iD
Author: Kees de Groot ORCID iD

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