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Low Power Hydrogen Sensors Using Electrodeposited PdNi Schottky Diodes

Low Power Hydrogen Sensors Using Electrodeposited PdNi Schottky Diodes
Low Power Hydrogen Sensors Using Electrodeposited PdNi Schottky Diodes
The use of electrodeposited PdNi Schottky barriers as low power Hydrogen sensors is investigated. Electrodeposited PdNi Schottky barriers exhibit very low reverse bias current and the Palladium content of the film causes the Hydrogen molecules to dissociate and be absorbed by the film, changing the metal work function and device current. The Schottky diodes were fabricated on 0.5-1.5 Ohmcm (100) n-type Si by electrodeposition of PdNi followed by evaporation of Aluminium contact pads. Electrical measurements at different Hydrogen pressures were performed on back to back Schottky diodes in a vacuum chamber using pure Nitrogen and a 5% Hydrogen-Nitrogen mixture. Very low currents of 1nA were measured in the absence of Hydrogen. Large increases in the currents, upto a factor of 100, were observed upon exposure to different Hydrogen partial pressures. The highest sensitivity was estimated to be 17.27 nA/mbar. The low idle current, simplicity of fabrication process and ability to easily integrate with conventional electronics proves the suitability of electrodeposited PdNi Schottky barriers as low power Hydrogen sensors.
Usgaocar, Ashwin
b610383c-4ab3-4db7-af1a-5ba77387441d
de Groot, Kees
92cd2e02-fcc4-43da-8816-c86f966be90c
Boulart, C.
68996c16-f6fa-4c81-a5b3-5af59685f77d
Chavagnac, V.M.C.
1150fa5c-f80e-4656-96c4-775a7878b9f8
Usgaocar, Ashwin
b610383c-4ab3-4db7-af1a-5ba77387441d
de Groot, Kees
92cd2e02-fcc4-43da-8816-c86f966be90c
Boulart, C.
68996c16-f6fa-4c81-a5b3-5af59685f77d
Chavagnac, V.M.C.
1150fa5c-f80e-4656-96c4-775a7878b9f8

Usgaocar, Ashwin, de Groot, Kees, Boulart, C. and Chavagnac, V.M.C. (2010) Low Power Hydrogen Sensors Using Electrodeposited PdNi Schottky Diodes. Eursosensors, Linz, Austria. (In Press)

Record type: Conference or Workshop Item (Paper)

Abstract

The use of electrodeposited PdNi Schottky barriers as low power Hydrogen sensors is investigated. Electrodeposited PdNi Schottky barriers exhibit very low reverse bias current and the Palladium content of the film causes the Hydrogen molecules to dissociate and be absorbed by the film, changing the metal work function and device current. The Schottky diodes were fabricated on 0.5-1.5 Ohmcm (100) n-type Si by electrodeposition of PdNi followed by evaporation of Aluminium contact pads. Electrical measurements at different Hydrogen pressures were performed on back to back Schottky diodes in a vacuum chamber using pure Nitrogen and a 5% Hydrogen-Nitrogen mixture. Very low currents of 1nA were measured in the absence of Hydrogen. Large increases in the currents, upto a factor of 100, were observed upon exposure to different Hydrogen partial pressures. The highest sensitivity was estimated to be 17.27 nA/mbar. The low idle current, simplicity of fabrication process and ability to easily integrate with conventional electronics proves the suitability of electrodeposited PdNi Schottky barriers as low power Hydrogen sensors.

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More information

Accepted/In Press date: September 2010
Additional Information: Event Dates: September 2010
Venue - Dates: Eursosensors, Linz, Austria, 2010-08-31
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 271790
URI: http://eprints.soton.ac.uk/id/eprint/271790
PURE UUID: bf2366e3-1914-4514-a541-066a7c9dff60
ORCID for Kees de Groot: ORCID iD orcid.org/0000-0002-3850-7101

Catalogue record

Date deposited: 15 Dec 2010 11:32
Last modified: 31 Mar 2020 00:27

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Contributors

Author: Ashwin Usgaocar
Author: Kees de Groot ORCID iD
Author: C. Boulart
Author: V.M.C. Chavagnac

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