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Growth of Carbon Nanotubes on HfO2 towards Highly Sensitive Nano-Sensors

Growth of Carbon Nanotubes on HfO2 towards Highly Sensitive Nano-Sensors
Growth of Carbon Nanotubes on HfO2 towards Highly Sensitive Nano-Sensors
Carbon nanotube (CNT) growth on HfO2 is reported for the first time. The process uses a combination of Ge and Fe nanoparticles and achieves an increase in CNT density from 0.15 to 6.2 mm length/mm2 compared with Fe nanoparticles alone. The synthesized CNTs are assessed by the fabrication of back-gate CNT field-effect transistors with Al source/drain contacts for nano-sensor applications. The devices exhibit excellent p-type behavior with an Ion=Ioff ratio of 105 and a steep sub-threshold slope of 130 mV/dec.
Carbon nanotube, field-effect transistor
04DN11-1-04DN11-4
Uchino, Takashi
53356d82-f008-4b0e-8c7e-359c0d283b6c
Ayre, G.
f0c2f684-1bba-4bf9-8e23-a82e51787ff9
Smith, D. C.
8c690bc4-be37-4141-972f-f0787a691648
Hutchison, J. L.
8d586f88-f515-450c-b504-55ea039cae68
de Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c
Ashburn, Peter
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Uchino, Takashi
53356d82-f008-4b0e-8c7e-359c0d283b6c
Ayre, G.
f0c2f684-1bba-4bf9-8e23-a82e51787ff9
Smith, D. C.
8c690bc4-be37-4141-972f-f0787a691648
Hutchison, J. L.
8d586f88-f515-450c-b504-55ea039cae68
de Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c
Ashburn, Peter
68cef6b7-205b-47aa-9efb-f1f09f5c1038

Uchino, Takashi, Ayre, G., Smith, D. C., Hutchison, J. L., de Groot, C.H. and Ashburn, Peter (2010) Growth of Carbon Nanotubes on HfO2 towards Highly Sensitive Nano-Sensors. Japanese Journal of Applied Physics, 49, 04DN11-1-04DN11-4.

Record type: Article

Abstract

Carbon nanotube (CNT) growth on HfO2 is reported for the first time. The process uses a combination of Ge and Fe nanoparticles and achieves an increase in CNT density from 0.15 to 6.2 mm length/mm2 compared with Fe nanoparticles alone. The synthesized CNTs are assessed by the fabrication of back-gate CNT field-effect transistors with Al source/drain contacts for nano-sensor applications. The devices exhibit excellent p-type behavior with an Ion=Ioff ratio of 105 and a steep sub-threshold slope of 130 mV/dec.

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More information

Published date: 1 April 2010
Keywords: Carbon nanotube, field-effect transistor
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 271796
URI: http://eprints.soton.ac.uk/id/eprint/271796
PURE UUID: 405657a6-e525-4494-8039-302c3017cb71
ORCID for C.H. de Groot: ORCID iD orcid.org/0000-0002-3850-7101

Catalogue record

Date deposited: 15 Dec 2010 16:50
Last modified: 20 Jul 2019 01:05

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Contributors

Author: Takashi Uchino
Author: G. Ayre
Author: D. C. Smith
Author: J. L. Hutchison
Author: C.H. de Groot ORCID iD
Author: Peter Ashburn

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