Electrical and microstructural properties of Bi2-xSbxTe and Bi1-xSbxTe2 thin foils obtained by the ultrarapid quenching process, the 4th International Conference on Material for Microelectronics and Nanoengineering, Finland, ESPOO 2002, pp. 93-96
Electrical and microstructural properties of Bi2-xSbxTe and Bi1-xSbxTe2 thin foils obtained by the ultrarapid quenching process, the 4th International Conference on Material for Microelectronics and Nanoengineering, Finland, ESPOO 2002, pp. 93-96
93-96
Kukharenka, E
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Frety, N
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Shepelevich, VG
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Tedenac, JC
d5e64f86-bc17-40e7-afbd-dfd5e768bdf8
2002
Kukharenka, E
b34ae878-2776-4088-8880-5b2bd4f33ec3
Frety, N
cff812e9-cde8-4b2f-bb26-d77a821e0b7d
Shepelevich, VG
dd4e9735-9e34-4e1b-b07e-e4e8c8217692
Tedenac, JC
d5e64f86-bc17-40e7-afbd-dfd5e768bdf8
Kukharenka, E, Frety, N, Shepelevich, VG and Tedenac, JC
(2002)
Electrical and microstructural properties of Bi2-xSbxTe and Bi1-xSbxTe2 thin foils obtained by the ultrarapid quenching process, the 4th International Conference on Material for Microelectronics and Nanoengineering, Finland, ESPOO 2002, pp. 93-96.
the 4th International Conference on Material for Microelectronics and Nanoengineering, , ESPOO, Finland.
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Published date: 2002
Venue - Dates:
the 4th International Conference on Material for Microelectronics and Nanoengineering, , ESPOO, Finland, 2002-01-01
Organisations:
Electronics & Computer Science, EEE
Identifiers
Local EPrints ID: 271825
URI: http://eprints.soton.ac.uk/id/eprint/271825
PURE UUID: 4f2caa64-7bbb-4e13-bea9-c9e0521e68b0
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Date deposited: 22 Dec 2010 11:21
Last modified: 10 Dec 2021 23:27
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Contributors
Author:
E Kukharenka
Author:
N Frety
Author:
VG Shepelevich
Author:
JC Tedenac
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