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Electrical and microstructural properties of Bi2-xSbxTe and Bi1-xSbxTe2 thin foils obtained by the ultrarapid quenching process, the 4th International Conference on Material for Microelectronics and Nanoengineering, Finland, ESPOO 2002, pp. 93-96

Electrical and microstructural properties of Bi2-xSbxTe and Bi1-xSbxTe2 thin foils obtained by the ultrarapid quenching process, the 4th International Conference on Material for Microelectronics and Nanoengineering, Finland, ESPOO 2002, pp. 93-96
Electrical and microstructural properties of Bi2-xSbxTe and Bi1-xSbxTe2 thin foils obtained by the ultrarapid quenching process, the 4th International Conference on Material for Microelectronics and Nanoengineering, Finland, ESPOO 2002, pp. 93-96
93-96
Kukharenka, E
b34ae878-2776-4088-8880-5b2bd4f33ec3
Frety, N
cff812e9-cde8-4b2f-bb26-d77a821e0b7d
Shepelevich, VG
dd4e9735-9e34-4e1b-b07e-e4e8c8217692
Tedenac, JC
d5e64f86-bc17-40e7-afbd-dfd5e768bdf8
Kukharenka, E
b34ae878-2776-4088-8880-5b2bd4f33ec3
Frety, N
cff812e9-cde8-4b2f-bb26-d77a821e0b7d
Shepelevich, VG
dd4e9735-9e34-4e1b-b07e-e4e8c8217692
Tedenac, JC
d5e64f86-bc17-40e7-afbd-dfd5e768bdf8

Kukharenka, E, Frety, N, Shepelevich, VG and Tedenac, JC (2002) Electrical and microstructural properties of Bi2-xSbxTe and Bi1-xSbxTe2 thin foils obtained by the ultrarapid quenching process, the 4th International Conference on Material for Microelectronics and Nanoengineering, Finland, ESPOO 2002, pp. 93-96. the 4th International Conference on Material for Microelectronics and Nanoengineering, Finland. pp. 93-96 .

Record type: Conference or Workshop Item (Other)

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Published date: 2002
Venue - Dates: the 4th International Conference on Material for Microelectronics and Nanoengineering, Finland, 2002-01-01
Organisations: Electronics & Computer Science, EEE

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Local EPrints ID: 271825
URI: http://eprints.soton.ac.uk/id/eprint/271825
PURE UUID: 4f2caa64-7bbb-4e13-bea9-c9e0521e68b0

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Date deposited: 22 Dec 2010 11:21
Last modified: 18 Jul 2017 06:38

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