An ultra low power MMIC amplifier using 50nm delta doped In0.52Al0.48As / In0.53Ga0.47As metamorphic HEMT

Hwang, C.J., Lok, L.B., Chong, Harold, Holland, M., Thayne, I.G. and Elgaid, K. (2010) An ultra low power MMIC amplifier using 50nm delta doped In0.52Al0.48As / In0.53Ga0.47As metamorphic HEMT. IEEE Electron Device Letters, 31 (11), 1230-1232. (doi:10.1109/LED.2010.2070484).

Record type: Article

Abstract

An ultra-low-power monolithic amplifier using 50-nm gate-length GaAs metamorphic high-electron-mobility transistor (MHEMT) has been designed and fabricated by a coplanar waveguide monolithic microwave integrated circuit process.

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Published date: 11 November 2010

Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 271943

URI: http://eprints.soton.ac.uk/id/eprint/271943

DOI: doi:10.1109/LED.2010.2070484

ISSN: 0741-3106

PURE UUID: b655e3d4-5c7d-4467-aa96-0de596212c40

ORCID for Harold Chong:

orcid.org/0000-0002-7110-5761

Catalogue record

Date deposited: 24 Jan 2011 16:45

Last modified: 15 Mar 2024 03:30

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Contributors

Author: C.J. Hwang

Author: L.B. Lok

Author: Harold Chong

Author: M. Holland

Author: I.G. Thayne

Author: K. Elgaid

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