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Strain distribution analysis of sputter-formed strained Si by tip-enhanced Raman spectroscopy

Strain distribution analysis of sputter-formed strained Si by tip-enhanced Raman spectroscopy
Strain distribution analysis of sputter-formed strained Si by tip-enhanced Raman spectroscopy
Simultaneous nanometer-scale measurements of the strain and surface undulation distributions of strained Si (s-Si) layers on strain-relief quadruple-Si1-xGex-layer buffers, using a combined atomic force microscopy (AFM) and tip-enhanced Raman spectroscopy (TERS) system, clarify that an s-Si sample formed by our previously proposed sputter epitaxy method has a smoother and more uniformly strained surface than an s-Si sample formed by gas-source molecular beam epitaxy. The TERS analyses suggest that the compositional fluctuation of the underlying Si1-xGex buffer layer is largely related to the weak s-Si strain fluctuation of the sputtered sample
025701-1-025701-3
Hanafusa, H.
e48ea1d5-a4c0-47e4-b464-842a596e9261
Hirose, N.
b3ff6c36-c555-4769-8b54-02ec17d27b37
Kasamatsu, A.
cd727b45-037e-4830-9f85-d464f7fc106f
Mimura, T.
79a58922-c72e-4441-9f0e-242cb0514b75
Matsui, T.
2b8d25ec-014e-4182-af58-5b9ba745bc86
Chong, H.
795aa67f-29e5-480f-b1bc-9bd5c0d558e1
Mizuta, H.
f14d5ffc-751b-472b-8dba-c8518c6840b9
Suda, Y.
7053a361-c6a4-4966-a498-5dba35712b78
Hanafusa, H.
e48ea1d5-a4c0-47e4-b464-842a596e9261
Hirose, N.
b3ff6c36-c555-4769-8b54-02ec17d27b37
Kasamatsu, A.
cd727b45-037e-4830-9f85-d464f7fc106f
Mimura, T.
79a58922-c72e-4441-9f0e-242cb0514b75
Matsui, T.
2b8d25ec-014e-4182-af58-5b9ba745bc86
Chong, H.
795aa67f-29e5-480f-b1bc-9bd5c0d558e1
Mizuta, H.
f14d5ffc-751b-472b-8dba-c8518c6840b9
Suda, Y.
7053a361-c6a4-4966-a498-5dba35712b78

Hanafusa, H., Hirose, N., Kasamatsu, A., Mimura, T., Matsui, T., Chong, H., Mizuta, H. and Suda, Y. (2011) Strain distribution analysis of sputter-formed strained Si by tip-enhanced Raman spectroscopy. APPLIED PHYSICS EXPRESS, 4, 025701-1-025701-3. (doi:10.1143/APEX.4.025701).

Record type: Article

Abstract

Simultaneous nanometer-scale measurements of the strain and surface undulation distributions of strained Si (s-Si) layers on strain-relief quadruple-Si1-xGex-layer buffers, using a combined atomic force microscopy (AFM) and tip-enhanced Raman spectroscopy (TERS) system, clarify that an s-Si sample formed by our previously proposed sputter epitaxy method has a smoother and more uniformly strained surface than an s-Si sample formed by gas-source molecular beam epitaxy. The TERS analyses suggest that the compositional fluctuation of the underlying Si1-xGex buffer layer is largely related to the weak s-Si strain fluctuation of the sputtered sample

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Published date: January 2011
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 271944
URI: https://eprints.soton.ac.uk/id/eprint/271944
PURE UUID: 221481fe-967e-4494-97ef-a2702a5fe950
ORCID for H. Chong: ORCID iD orcid.org/0000-0002-7110-5761

Catalogue record

Date deposited: 24 Jan 2011 16:49
Last modified: 20 Jul 2019 00:51

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