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Si/Ge hole-tunneling double-barrier resonant tunneling diodes formed on sputtered flat Ge layers

Si/Ge hole-tunneling double-barrier resonant tunneling diodes formed on sputtered flat Ge layers
Si/Ge hole-tunneling double-barrier resonant tunneling diodes formed on sputtered flat Ge layers
We have demonstrated Si/Ge hole-tunneling double-barrier resonant tunneling diodes (RTDs) formed on flat Ge layers with a relaxation rate of 89% by our proposed method; in this method, the flat Ge layers can be directly formed on highly B-doped Si(001) substrates using our proposed sputter epitaxy method. The RTDs exhibit clear negative differential resistance effects in the static current–voltage (I–V) curves at room temperature. The quantized energy level estimation suggests that resonance peaks that appeared in the I–V curves are attributed to hole tunneling through the first heavy- and light-hole energy levels.
024102-1-024102-3
Hanafusa, H.
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Hirose, N.
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Kasamatsu, A.
885302a9-7ae1-44bf-b31f-347b58e6d728
Miura, T.
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Matsui, T.
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Chong, H.
795aa67f-29e5-480f-b1bc-9bd5c0d558e1
Mizuta, H.
f14d5ffc-751b-472b-8dba-c8518c6840b9
Suda, Y.
eee1b409-2f88-4739-a724-633bc45209b8
Hanafusa, H.
ed522bc3-a896-4e32-b855-8a50b68a67d5
Hirose, N.
b90788ff-66d7-493b-883e-fa791fb3892f
Kasamatsu, A.
885302a9-7ae1-44bf-b31f-347b58e6d728
Miura, T.
3b320569-2bed-468a-b0d7-4ec255716083
Matsui, T.
6f4df45c-d253-4b38-8814-0f54b04a9dba
Chong, H.
795aa67f-29e5-480f-b1bc-9bd5c0d558e1
Mizuta, H.
f14d5ffc-751b-472b-8dba-c8518c6840b9
Suda, Y.
eee1b409-2f88-4739-a724-633bc45209b8

Hanafusa, H., Hirose, N., Kasamatsu, A., Miura, T., Matsui, T., Chong, H., Mizuta, H. and Suda, Y. (2011) Si/Ge hole-tunneling double-barrier resonant tunneling diodes formed on sputtered flat Ge layers. APPLIED PHYSICS EXPRESS, 4, 024102-1-024102-3.

Record type: Article

Abstract

We have demonstrated Si/Ge hole-tunneling double-barrier resonant tunneling diodes (RTDs) formed on flat Ge layers with a relaxation rate of 89% by our proposed method; in this method, the flat Ge layers can be directly formed on highly B-doped Si(001) substrates using our proposed sputter epitaxy method. The RTDs exhibit clear negative differential resistance effects in the static current–voltage (I–V) curves at room temperature. The quantized energy level estimation suggests that resonance peaks that appeared in the I–V curves are attributed to hole tunneling through the first heavy- and light-hole energy levels.

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More information

Published date: January 2011
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 271951
URI: https://eprints.soton.ac.uk/id/eprint/271951
PURE UUID: aefeb0e2-054f-4621-8f9d-4a9744fea27b
ORCID for H. Chong: ORCID iD orcid.org/0000-0002-7110-5761

Catalogue record

Date deposited: 27 Jan 2011 10:20
Last modified: 29 Oct 2019 01:46

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