Moktadir, Zakaria, Boden, Stuart, Ghiass, Mohammad Adel, Rutt, Harvey and Mizuta, Hiroshi (2011) U-shaped bilayer graphene channel transistor with very high Ion/Ioff ratio. Electronics Letters, 47 (3).
Record type:
Article
Abstract
A novel graphene transistor architecture is reported. The transistor has a U-shaped geometry and was fabricated using a gallium focused ion beam (FIB). The channel conductance was tuned with a back gate. The Ion/Ioff ratio exceeded 10E5.
More information
Published date: February 2011
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 272034
URI: http://eprints.soton.ac.uk/id/eprint/272034
ISSN: 0013-5194
PURE UUID: e7b44d3b-a784-4593-84c8-9dbf4837b759
Catalogue record
Date deposited: 16 Feb 2011 19:26
Last modified: 15 Mar 2024 03:21
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Contributors
Author:
Zakaria Moktadir
Author:
Stuart Boden
Author:
Mohammad Adel Ghiass
Author:
Harvey Rutt
Author:
Hiroshi Mizuta
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