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U-shaped bilayer graphene channel transistor with very high Ion/Ioff ratio

U-shaped bilayer graphene channel transistor with very high Ion/Ioff ratio
U-shaped bilayer graphene channel transistor with very high Ion/Ioff ratio
A novel graphene transistor architecture is reported. The transistor has a U-shaped geometry and was fabricated using a gallium focused ion beam (FIB). The channel conductance was tuned with a back gate. The Ion/Ioff ratio exceeded 10E5.
0013-5194
Moktadir, Zakaria
34472668-ffda-4287-8fea-2c4f3bf1e2fa
Boden, Stuart
83976b65-e90f-42d1-9a01-fe9cfc571bf8
Ghiass, Mohammad Adel
ddf17d39-621b-44c6-bf39-2fa84e23b492
Rutt, Harvey
e09fa327-0c01-467a-9898-4e7f0cd715fc
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Moktadir, Zakaria
34472668-ffda-4287-8fea-2c4f3bf1e2fa
Boden, Stuart
83976b65-e90f-42d1-9a01-fe9cfc571bf8
Ghiass, Mohammad Adel
ddf17d39-621b-44c6-bf39-2fa84e23b492
Rutt, Harvey
e09fa327-0c01-467a-9898-4e7f0cd715fc
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9

Moktadir, Zakaria, Boden, Stuart, Ghiass, Mohammad Adel, Rutt, Harvey and Mizuta, Hiroshi (2011) U-shaped bilayer graphene channel transistor with very high Ion/Ioff ratio. Electronics Letters, 47 (3).

Record type: Article

Abstract

A novel graphene transistor architecture is reported. The transistor has a U-shaped geometry and was fabricated using a gallium focused ion beam (FIB). The channel conductance was tuned with a back gate. The Ion/Ioff ratio exceeded 10E5.

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More information

Published date: February 2011
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 272034
URI: https://eprints.soton.ac.uk/id/eprint/272034
ISSN: 0013-5194
PURE UUID: e7b44d3b-a784-4593-84c8-9dbf4837b759
ORCID for Stuart Boden: ORCID iD orcid.org/0000-0002-4232-1828

Catalogue record

Date deposited: 16 Feb 2011 19:26
Last modified: 06 Jun 2018 12:43

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Contributors

Author: Zakaria Moktadir
Author: Stuart Boden ORCID iD
Author: Mohammad Adel Ghiass
Author: Harvey Rutt
Author: Hiroshi Mizuta

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