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Theory of quasiballistic transport through nanocrystalline silicon dots

Theory of quasiballistic transport through nanocrystalline silicon dots
Theory of quasiballistic transport through nanocrystalline silicon dots
A model to describe the underlying physics of high-energy electron emission from a porous silicon diode is presented. The model is based on an atomistic tight-binding method combined with semiclassical Monte Carlo simulation. It well reproduces essential features of experimental findings. An initial acceleration region is shown to play a crucial role in generating quasiballistic electron emission.
0003-6951
62104
Mori, Nobuya
ac4568f4-12e6-4287-b54d-cb0242d01ec8
Minari, Hideki
9c3a6ccf-5e2a-47ee-926f-04bade1467ed
Uno, Shigeyasu
acc03158-3412-448e-884e-4ad24947a77c
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Koshida, Nobuyoshi
f0f7d8b7-2566-4627-9f8c-ba5cecd11976
Mori, Nobuya
ac4568f4-12e6-4287-b54d-cb0242d01ec8
Minari, Hideki
9c3a6ccf-5e2a-47ee-926f-04bade1467ed
Uno, Shigeyasu
acc03158-3412-448e-884e-4ad24947a77c
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Koshida, Nobuyoshi
f0f7d8b7-2566-4627-9f8c-ba5cecd11976

Mori, Nobuya, Minari, Hideki, Uno, Shigeyasu, Mizuta, Hiroshi and Koshida, Nobuyoshi (2011) Theory of quasiballistic transport through nanocrystalline silicon dots. Applied Physics Letters, 98, 62104.

Record type: Article

Abstract

A model to describe the underlying physics of high-energy electron emission from a porous silicon diode is presented. The model is based on an atomistic tight-binding method combined with semiclassical Monte Carlo simulation. It well reproduces essential features of experimental findings. An initial acceleration region is shown to play a crucial role in generating quasiballistic electron emission.

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Published date: 2011
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 272035
URI: https://eprints.soton.ac.uk/id/eprint/272035
ISSN: 0003-6951
PURE UUID: c36b6639-0b9c-4dd7-ba57-921ad706bfd0

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Date deposited: 16 Feb 2011 19:34
Last modified: 19 Jul 2019 22:11

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