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Metal catalyst-free growth of carbon nanotubes and their application in field effect transistors

Metal catalyst-free growth of carbon nanotubes and their application in field effect transistors
Metal catalyst-free growth of carbon nanotubes and their application in field effect transistors
The metal-catalyst-free growth of carbon nanotubes (CNTs) using chemical vapor deposition and the application in field-effect transistors (FETs) is demonstrated. The CNT growth process used a 3-nm-thick Ge layer on SiO2 that was subsequently annealed to produce Ge nanoparticles. Raman measurements show the presence of radial breathing mode peaks and the absence of the disorder induced D-band, indicating single walled CNTs with a low defect density. The synthesized CNTs are used to fabricate CNTFETs and the best device has a state-of-the-art on/off current ratio of 3×108 and a steep sub-threshold slope of 110 mV/dec.
carbon nanotubes, field effect transistors, germanium
1099-0062/2011/14(4)/K21/3/
k144-k148
Uchino, T.
706196b8-2f2c-403d-97aa-2995eac8572b
Ayre, G.N.
0a7c003b-00c1-4412-bd40-03005e7310c2
Smith, D.C.
536ad98e-9c71-4171-a7b5-51d796090e5d
Hutchison, J.L.
65f59105-495d-42a5-9c51-b62c82c3044e
de Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Uchino, T.
706196b8-2f2c-403d-97aa-2995eac8572b
Ayre, G.N.
0a7c003b-00c1-4412-bd40-03005e7310c2
Smith, D.C.
536ad98e-9c71-4171-a7b5-51d796090e5d
Hutchison, J.L.
65f59105-495d-42a5-9c51-b62c82c3044e
de Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038

Uchino, T., Ayre, G.N., Smith, D.C., Hutchison, J.L., de Groot, C.H. and Ashburn, P. (2011) Metal catalyst-free growth of carbon nanotubes and their application in field effect transistors. Electrochemical Society Letters, 156 (8), k144-k148. (1099-0062/2011/14(4)/K21/3/).

Record type: Article

Abstract

The metal-catalyst-free growth of carbon nanotubes (CNTs) using chemical vapor deposition and the application in field-effect transistors (FETs) is demonstrated. The CNT growth process used a 3-nm-thick Ge layer on SiO2 that was subsequently annealed to produce Ge nanoparticles. Raman measurements show the presence of radial breathing mode peaks and the absence of the disorder induced D-band, indicating single walled CNTs with a low defect density. The synthesized CNTs are used to fabricate CNTFETs and the best device has a state-of-the-art on/off current ratio of 3×108 and a steep sub-threshold slope of 110 mV/dec.

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Published date: 2 March 2011
Keywords: carbon nanotubes, field effect transistors, germanium
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 272077
URI: https://eprints.soton.ac.uk/id/eprint/272077
DOI: 1099-0062/2011/14(4)/K21/3/
PURE UUID: 52f9f691-cd44-41de-aa76-f38dd100d2cf
ORCID for C.H. de Groot: ORCID iD orcid.org/0000-0002-3850-7101

Catalogue record

Date deposited: 02 Mar 2011 11:26
Last modified: 17 Aug 2019 00:37

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