Fabrication of ZnO Nanowire Device Using Top-Down Approach
Fabrication of ZnO Nanowire Device Using Top-Down Approach
ZnO nanowire devices were fabricated from top-down using optical lithography. The nanowires are formed from anisotropic etch of 100 nm Filtered Cathodic Vacuum Arc (FCVA) deposited ZnO thin film. The nanowires are characterized using SEM and Raman spectroscopy via image mapping. The current-voltage characteristics showed a typical ohmic behaviour after contact annealing, reflecting the influence of the lowering of contact barriers between the ZnO nanowire device and the Al metal electrode.
978-1-4577-0090-3
77-79
Mohamed Sultan, Suhana
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Sun, Kai
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Partridge, J
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Allen, M
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Ashburn, Peter
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Chong, Harold
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14 March 2011
Mohamed Sultan, Suhana
f789d611-a667-4d61-82b8-3902158b29c2
Sun, Kai
2ace53c1-82cc-47e5-911e-898b143163d3
Partridge, J
acb4d171-8d1e-4729-8fce-69fb5ea77b5f
Allen, M
c65d17b3-eec3-4bd2-b62b-19ca1e555224
Ashburn, Peter
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Chong, Harold
795aa67f-29e5-480f-b1bc-9bd5c0d558e1
Mohamed Sultan, Suhana, Sun, Kai, Partridge, J, Allen, M, Ashburn, Peter and Chong, Harold
(2011)
Fabrication of ZnO Nanowire Device Using Top-Down Approach.
12th International Conference on Ultimate Integration on Silicon (ULIS), Cork,Ireland.
14 - 16 Mar 2011.
.
(doi:10.1109/ULIS.2011.5757956).
Record type:
Conference or Workshop Item
(Poster)
Abstract
ZnO nanowire devices were fabricated from top-down using optical lithography. The nanowires are formed from anisotropic etch of 100 nm Filtered Cathodic Vacuum Arc (FCVA) deposited ZnO thin film. The nanowires are characterized using SEM and Raman spectroscopy via image mapping. The current-voltage characteristics showed a typical ohmic behaviour after contact annealing, reflecting the influence of the lowering of contact barriers between the ZnO nanowire device and the Al metal electrode.
Text
Proceedings-ULIS-2011_ULISPOSTER.pdf
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Published date: 14 March 2011
Additional Information:
Event Dates: 14/03/2011-16/03/2011
Venue - Dates:
12th International Conference on Ultimate Integration on Silicon (ULIS), Cork,Ireland, 2011-03-14 - 2011-03-16
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 272257
URI: http://eprints.soton.ac.uk/id/eprint/272257
ISBN: 978-1-4577-0090-3
PURE UUID: e810e7f2-1f7d-4468-a1ea-c676b3937298
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Date deposited: 05 May 2011 18:49
Last modified: 15 Mar 2024 03:30
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Contributors
Author:
Suhana Mohamed Sultan
Author:
Kai Sun
Author:
J Partridge
Author:
M Allen
Author:
Harold Chong
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