The University of Southampton
University of Southampton Institutional Repository

Fabrication of ZnO Nanowire Device Using Top-Down Approach

Fabrication of ZnO Nanowire Device Using Top-Down Approach
Fabrication of ZnO Nanowire Device Using Top-Down Approach
ZnO nanowire devices were fabricated from top-down using optical lithography. The nanowires are formed from anisotropic etch of 100 nm Filtered Cathodic Vacuum Arc (FCVA) deposited ZnO thin film. The nanowires are characterized using SEM and Raman spectroscopy via image mapping. The current-voltage characteristics showed a typical ohmic behaviour after contact annealing, reflecting the influence of the lowering of contact barriers between the ZnO nanowire device and the Al metal electrode.
978-1-4577-0090-3
77-79
Mohamed Sultan, Suhana
f789d611-a667-4d61-82b8-3902158b29c2
Sun, Kai
2ace53c1-82cc-47e5-911e-898b143163d3
Partridge, J
acb4d171-8d1e-4729-8fce-69fb5ea77b5f
Allen, M
c65d17b3-eec3-4bd2-b62b-19ca1e555224
Ashburn, Peter
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Chong, Harold
795aa67f-29e5-480f-b1bc-9bd5c0d558e1
Mohamed Sultan, Suhana
f789d611-a667-4d61-82b8-3902158b29c2
Sun, Kai
2ace53c1-82cc-47e5-911e-898b143163d3
Partridge, J
acb4d171-8d1e-4729-8fce-69fb5ea77b5f
Allen, M
c65d17b3-eec3-4bd2-b62b-19ca1e555224
Ashburn, Peter
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Chong, Harold
795aa67f-29e5-480f-b1bc-9bd5c0d558e1

Mohamed Sultan, Suhana, Sun, Kai, Partridge, J, Allen, M, Ashburn, Peter and Chong, Harold (2011) Fabrication of ZnO Nanowire Device Using Top-Down Approach. 12th International Conference on Ultimate Integration on Silicon (ULIS). 14 - 16 Mar 2011. pp. 77-79 . (doi:10.1109/ULIS.2011.5757956).

Record type: Conference or Workshop Item (Poster)

Abstract

ZnO nanowire devices were fabricated from top-down using optical lithography. The nanowires are formed from anisotropic etch of 100 nm Filtered Cathodic Vacuum Arc (FCVA) deposited ZnO thin film. The nanowires are characterized using SEM and Raman spectroscopy via image mapping. The current-voltage characteristics showed a typical ohmic behaviour after contact annealing, reflecting the influence of the lowering of contact barriers between the ZnO nanowire device and the Al metal electrode.

Text
Proceedings-ULIS-2011_ULISPOSTER.pdf - Version of Record
Download (335kB)

More information

Published date: 14 March 2011
Additional Information: Event Dates: 14/03/2011-16/03/2011
Venue - Dates: 12th International Conference on Ultimate Integration on Silicon (ULIS), 2011-03-14 - 2011-03-16
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 272257
URI: https://eprints.soton.ac.uk/id/eprint/272257
ISBN: 978-1-4577-0090-3
PURE UUID: e810e7f2-1f7d-4468-a1ea-c676b3937298
ORCID for Harold Chong: ORCID iD orcid.org/0000-0002-7110-5761

Catalogue record

Date deposited: 05 May 2011 18:49
Last modified: 20 Jul 2019 00:51

Export record

Altmetrics

Download statistics

Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.

View more statistics

Atom RSS 1.0 RSS 2.0

Contact ePrints Soton: eprints@soton.ac.uk

ePrints Soton supports OAI 2.0 with a base URL of https://eprints.soton.ac.uk/cgi/oai2

This repository has been built using EPrints software, developed at the University of Southampton, but available to everyone to use.

We use cookies to ensure that we give you the best experience on our website. If you continue without changing your settings, we will assume that you are happy to receive cookies on the University of Southampton website.

×