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Single step deposition method for nearly stoichiometric CuInSe2 thin films

Single step deposition method for nearly stoichiometric CuInSe2 thin films
Single step deposition method for nearly stoichiometric CuInSe2 thin films
This paper reports the production of high quality copper indium diselenide thin films using pulsed DC magnetron sputtering from a powder target. As-grown thin films consisted of pin-hole free, densely packed grains. X-ray diffraction showed that films were highly orientated in the (112) and/or (204)/(220) direction with no secondary phases present. The most surprising and exciting outcome of this study was that the asgrown films were of near stoichiometric composition, almost independent of the composition of the starting material. No additional steps or substrate heating were necessary to incorporate selenium and create single phase CuInSe2. Electrical properties obtained by hot point probe and four point probe gave values of low resistivity and showed that the films were all p-type. The physical and structural properties of these films were analyzed using X-ray diffraction, scanning electron microscopy and atomic force microscopy. Resistivity measurements were carried out using the four point probe and hot probe methods. The single step deposition process can cut down the cost of the complex multi step processes involved in the traditional vacuum based deposition techniques.
0040-6090
3107-3112
Karthikeyan, Sreejith
20720225-6400-48b4-b79b-4b41b6b782b7
Hill, Arthur
4fd6d313-6e49-40f7-8f28-f0eebee05d0a
Pilkington, Rischard
1a6ec8a2-f399-4ecd-85ca-f73fb23b70f8
Cowpe, John
a2b32ffb-be63-4eb8-ac7d-21014838ad7d
Hisek, Jorg
6417a1f5-4655-4b71-8fdc-430284db8fad
Bagnall, Darren
5d84abc8-77e5-43f7-97cb-e28533f25ef1
Karthikeyan, Sreejith
20720225-6400-48b4-b79b-4b41b6b782b7
Hill, Arthur
4fd6d313-6e49-40f7-8f28-f0eebee05d0a
Pilkington, Rischard
1a6ec8a2-f399-4ecd-85ca-f73fb23b70f8
Cowpe, John
a2b32ffb-be63-4eb8-ac7d-21014838ad7d
Hisek, Jorg
6417a1f5-4655-4b71-8fdc-430284db8fad
Bagnall, Darren
5d84abc8-77e5-43f7-97cb-e28533f25ef1

Karthikeyan, Sreejith, Hill, Arthur, Pilkington, Rischard, Cowpe, John, Hisek, Jorg and Bagnall, Darren (2011) Single step deposition method for nearly stoichiometric CuInSe2 thin films. Thin Solid Films, 519 (10), 3107-3112.

Record type: Article

Abstract

This paper reports the production of high quality copper indium diselenide thin films using pulsed DC magnetron sputtering from a powder target. As-grown thin films consisted of pin-hole free, densely packed grains. X-ray diffraction showed that films were highly orientated in the (112) and/or (204)/(220) direction with no secondary phases present. The most surprising and exciting outcome of this study was that the asgrown films were of near stoichiometric composition, almost independent of the composition of the starting material. No additional steps or substrate heating were necessary to incorporate selenium and create single phase CuInSe2. Electrical properties obtained by hot point probe and four point probe gave values of low resistivity and showed that the films were all p-type. The physical and structural properties of these films were analyzed using X-ray diffraction, scanning electron microscopy and atomic force microscopy. Resistivity measurements were carried out using the four point probe and hot probe methods. The single step deposition process can cut down the cost of the complex multi step processes involved in the traditional vacuum based deposition techniques.

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Published date: 1 March 2011
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 272405
URI: https://eprints.soton.ac.uk/id/eprint/272405
ISSN: 0040-6090
PURE UUID: e877cab0-fa4c-40cd-bd25-bd9ec645c239

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Date deposited: 06 Jun 2011 06:40
Last modified: 14 Aug 2019 18:51

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