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A low power, high performance BiCMOS MIMO/diversity direct conversion transceiver IC for WiBro/WiMAX (802.16e)

A low power, high performance BiCMOS MIMO/diversity direct conversion transceiver IC for WiBro/WiMAX (802.16e)
A low power, high performance BiCMOS MIMO/diversity direct conversion transceiver IC for WiBro/WiMAX (802.16e)
This paper describes a dual signal path (MIMO) low power, high performance direct conversion WiBro/WiMAX 802.16 e radio transceiver optimized for mobile applications and for coexistence with co-located cellular and WLAN/Bluetooth systems. The direct-conversion transceiver is designed to be very flexible in respect of biasing and programmability, both to allow power consumption to be traded adaptively versus performance, and flexibility for any changes in the new transmission standard. Signal loopback and transmit power detection techniques are used in conjunction with the baseband modem processor to calibrate transmitter LO leakage and the transceiver and receiver IQ imbalances. The receiver achieves a noise figure (NF) of less than 2.5 dB over an operational frequency range of 2.3-2.7 GHz, and the gain is tunable from 0 dB to 97 dB in 1 dB steps. The maximum linear transmit power is 2.5 dBm and the transmit gain can be digitally controlled over a 75 dB range. The transceiver is fabricated in a 0.25 mum SiGe BiCMOS process and consumes 65/103 mA from a 2.8 V supply in OFDMA Rx/Tx modes, respectively
0018-9200
1731-1740
Locher, M.
61daab1b-968d-440d-aad0-babf85942136
Tomesen, M.
a2635251-0c49-43c4-9a52-14820a7d9e5e
Kuenen, J.
4f53a676-6ad6-44f7-9d96-2c095ddfcadd
Daanen, A.
7708d682-0bf6-4d81-a267-39cfccfc58c5
Visser, H.
59e252b1-a7f7-4287-a624-1eb14fe6be01
Essink, B.
edd16026-7a40-4a93-ac1d-5a85d0a9fc6b
Vervoort, P.P.
de9e5a67-ac54-43c9-b27f-e749994a47d0
Nijrolder, M.
d25f04f1-8493-4512-8c86-64050e748ab1
Kopmeiners, R.
2e891ca9-d6e1-4e23-870f-c87e0a750b31
Redman-White, W.
d5376167-c925-460f-8e9c-13bffda8e0bf
Balmford, R.
bcb4a19c-f3a5-4db8-a62e-0291e2e52fdf
El Waffaoui, R.
6ac698e6-b829-4fab-aa08-db100745f6a9
Locher, M.
61daab1b-968d-440d-aad0-babf85942136
Tomesen, M.
a2635251-0c49-43c4-9a52-14820a7d9e5e
Kuenen, J.
4f53a676-6ad6-44f7-9d96-2c095ddfcadd
Daanen, A.
7708d682-0bf6-4d81-a267-39cfccfc58c5
Visser, H.
59e252b1-a7f7-4287-a624-1eb14fe6be01
Essink, B.
edd16026-7a40-4a93-ac1d-5a85d0a9fc6b
Vervoort, P.P.
de9e5a67-ac54-43c9-b27f-e749994a47d0
Nijrolder, M.
d25f04f1-8493-4512-8c86-64050e748ab1
Kopmeiners, R.
2e891ca9-d6e1-4e23-870f-c87e0a750b31
Redman-White, W.
d5376167-c925-460f-8e9c-13bffda8e0bf
Balmford, R.
bcb4a19c-f3a5-4db8-a62e-0291e2e52fdf
El Waffaoui, R.
6ac698e6-b829-4fab-aa08-db100745f6a9

Locher, M., Tomesen, M., Kuenen, J., Daanen, A., Visser, H., Essink, B., Vervoort, P.P., Nijrolder, M., Kopmeiners, R., Redman-White, W., Balmford, R. and El Waffaoui, R. (2008) A low power, high performance BiCMOS MIMO/diversity direct conversion transceiver IC for WiBro/WiMAX (802.16e). IEEE Journal of Solid State Circuits, 43 (8), 1731-1740. (doi:10.1109/CICC.2007.4405691).

Record type: Article

Abstract

This paper describes a dual signal path (MIMO) low power, high performance direct conversion WiBro/WiMAX 802.16 e radio transceiver optimized for mobile applications and for coexistence with co-located cellular and WLAN/Bluetooth systems. The direct-conversion transceiver is designed to be very flexible in respect of biasing and programmability, both to allow power consumption to be traded adaptively versus performance, and flexibility for any changes in the new transmission standard. Signal loopback and transmit power detection techniques are used in conjunction with the baseband modem processor to calibrate transmitter LO leakage and the transceiver and receiver IQ imbalances. The receiver achieves a noise figure (NF) of less than 2.5 dB over an operational frequency range of 2.3-2.7 GHz, and the gain is tunable from 0 dB to 97 dB in 1 dB steps. The maximum linear transmit power is 2.5 dBm and the transmit gain can be digitally controlled over a 75 dB range. The transceiver is fabricated in a 0.25 mum SiGe BiCMOS process and consumes 65/103 mA from a 2.8 V supply in OFDMA Rx/Tx modes, respectively

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More information

Published date: August 2008
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 272575
URI: https://eprints.soton.ac.uk/id/eprint/272575
ISSN: 0018-9200
PURE UUID: 5850e76b-2953-4169-8671-06a68b74a76d

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Date deposited: 15 Jul 2011 13:27
Last modified: 16 Jul 2019 22:13

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