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Strain effects on avalanche multiplication in a silicon nanodot array

Strain effects on avalanche multiplication in a silicon nanodot array
Strain effects on avalanche multiplication in a silicon nanodot array
Mori, N.
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Minari, H.
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Uno, S.
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Mizuta, Hiroshi
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Koshida, N.
4dfd7d69-bba7-4a07-b428-97f917dc1a15
Mori, N.
5909cd97-a3bb-4da9-877c-dc2f368e06dd
Minari, H.
2d4c422f-4fd5-466f-8172-dd269deaaa95
Uno, S.
ad5d0b8f-4180-46db-b7e8-4d38c4d0bc61
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Koshida, N.
4dfd7d69-bba7-4a07-b428-97f917dc1a15

Mori, N., Minari, H., Uno, S., Mizuta, Hiroshi and Koshida, N. (2011) Strain effects on avalanche multiplication in a silicon nanodot array. 2011 International Conference on Solid State Devices and Materials (SSDM 2011), Nagoya, Japan. 27 - 29 Sep 2011.

Record type: Conference or Workshop Item (Other)

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More information

Published date: September 2011
Venue - Dates: 2011 International Conference on Solid State Devices and Materials (SSDM 2011), Nagoya, Japan, 2011-09-27 - 2011-09-29
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 272662
URI: http://eprints.soton.ac.uk/id/eprint/272662
PURE UUID: eb5e3fae-9905-40d4-b112-adc972b44de5

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Date deposited: 12 Aug 2011 20:36
Last modified: 10 Dec 2021 23:43

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Contributors

Author: N. Mori
Author: H. Minari
Author: S. Uno
Author: Hiroshi Mizuta
Author: N. Koshida

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