Electrodeposited Ni/Ge contacts for limiting leakage currents in Schottky barrier MOSFETs


Husain, Muhammad, Li, Xiaoli and De Groot, Kees (2009) Electrodeposited Ni/Ge contacts for limiting leakage currents in Schottky barrier MOSFETs At International Semiconductor Device Research Symposium, United States. 09 - 11 Dec 2009.

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Item Type: Conference or Workshop Item (Other)
Additional Information: Event Dates: December 9-11, 2009
Venue - Dates: International Semiconductor Device Research Symposium, United States, 2009-12-09 - 2009-12-11
Organisations: Nanoelectronics and Nanotechnology
ePrint ID: 272685
Date :
Date Event
2009Published
Date Deposited: 19 Aug 2011 11:22
Last Modified: 17 Apr 2017 17:41
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/272685

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