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Electrodeposited Ni/Ge contacts for limiting leakage currents in Schottky barrier MOSFETs

Electrodeposited Ni/Ge contacts for limiting leakage currents in Schottky barrier MOSFETs
Electrodeposited Ni/Ge contacts for limiting leakage currents in Schottky barrier MOSFETs
Husain, Muhammad
92db1f76-6760-4cf2-8e30-5d4a602fe15b
Li, Xiaoli
702314b0-2a65-4adb-9ef1-b8c62e8deb9f
de Groot, Kees
92cd2e02-fcc4-43da-8816-c86f966be90c
Husain, Muhammad
92db1f76-6760-4cf2-8e30-5d4a602fe15b
Li, Xiaoli
702314b0-2a65-4adb-9ef1-b8c62e8deb9f
de Groot, Kees
92cd2e02-fcc4-43da-8816-c86f966be90c

Husain, Muhammad, Li, Xiaoli and de Groot, Kees (2009) Electrodeposited Ni/Ge contacts for limiting leakage currents in Schottky barrier MOSFETs. International Semiconductor Device Research Symposium, United States. 09 - 11 Dec 2009.

Record type: Conference or Workshop Item (Other)
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More information

Published date: 2009
Additional Information: Event Dates: December 9-11, 2009
Venue - Dates: International Semiconductor Device Research Symposium, United States, 2009-12-09 - 2009-12-11
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 272685
URI: http://eprints.soton.ac.uk/id/eprint/272685
PURE UUID: 51731a0b-9d85-443a-bfde-c68a2c4e20c3
ORCID for Kees de Groot: ORCID iD orcid.org/0000-0002-3850-7101

Catalogue record

Date deposited: 19 Aug 2011 11:22
Last modified: 20 Jul 2019 01:05

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