Ab initio simulation of single dopant devices: electronic states and transport
Ab initio simulation of single dopant devices: electronic states and transport
Moraru, D
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Kuzuya, Y
3342f80c-da8a-4a14-bf93-ce6796abc4e8
Mizuno, T
40d9e9de-f525-4738-8392-199ce09ea60b
Tabe, M
accb1458-61e4-45d2-bbce-429032cafe2a
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
August 2011
Moraru, D
11b1458c-792e-4904-973f-1c21e9aa49b7
Kuzuya, Y
3342f80c-da8a-4a14-bf93-ce6796abc4e8
Mizuno, T
40d9e9de-f525-4738-8392-199ce09ea60b
Tabe, M
accb1458-61e4-45d2-bbce-429032cafe2a
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Moraru, D, Kuzuya, Y, Mizuno, T, Tabe, M and Mizuta, Hiroshi
(2011)
Ab initio simulation of single dopant devices: electronic states and transport.
2011 Autumn JSAP symposium 'Deterministic doping and single dopant devices for extended CMOS', Yamagata.
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応物H23秋シンポMoraru-Kuzuya-Mizuno-Tabe-MizutaUTF-8_Q_Kuzuya-Mizuno-Tabe-Mizuta.pdf
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Published date: August 2011
Additional Information:
Event Dates: August 2011
Venue - Dates:
2011 Autumn JSAP symposium 'Deterministic doping and single dopant devices for extended CMOS', Yamagata, 2011-08-01
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 272689
URI: http://eprints.soton.ac.uk/id/eprint/272689
PURE UUID: f3091ebc-bbf2-4a8e-978b-3773aaa9f11c
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Date deposited: 21 Aug 2011 18:31
Last modified: 14 Mar 2024 10:07
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Contributors
Author:
D Moraru
Author:
Y Kuzuya
Author:
T Mizuno
Author:
M Tabe
Author:
Hiroshi Mizuta
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