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Remote Plasma Atomic Layer Deposition of ZnO for Thin Film Electronic Applications

Remote Plasma Atomic Layer Deposition of ZnO for Thin Film Electronic Applications
Remote Plasma Atomic Layer Deposition of ZnO for Thin Film Electronic Applications
This paper describes a systematic approach to analyze the simultaneous impact of various reactant plasma parameters of remote plasma ALD on the ZnO thin film properties. Particular emphasis is placed on the film stoichiometry which affects the electrical properties of the thin film. Design of Experiment (DOE) is used to study the impact of the oxygen plasma parameters such as the RF power, pressure and plasma time to realize semiconductor quality of ZnO thin film. Based on the optimized plasma condition, staggered bottom-gate TFTs were fabricated and its electrical characteristics were measured.
Mohamed Sultan, Suhana
f789d611-a667-4d61-82b8-3902158b29c2
Clark, Owain
11d3a6e9-bff7-40e5-b5c9-f49cfdd69f6f
Ben Masaud, Taha
931dee8c-d8ac-4519-96ff-fa0813b4da59
Fang, Q.
fc0ef676-b862-4517-b79e-c1e3ed3803c0
Gunn, R.
c8d5dbda-af74-41cc-8d76-b39444285778
Al Hakim, Mohammad
983eec0e-e4c9-4ded-963a-35262a673188
Sun, Kai
2ace53c1-82cc-47e5-911e-898b143163d3
Ashburn, Peter
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Chong, Harold
795aa67f-29e5-480f-b1bc-9bd5c0d558e1
Mohamed Sultan, Suhana
f789d611-a667-4d61-82b8-3902158b29c2
Clark, Owain
11d3a6e9-bff7-40e5-b5c9-f49cfdd69f6f
Ben Masaud, Taha
931dee8c-d8ac-4519-96ff-fa0813b4da59
Fang, Q.
fc0ef676-b862-4517-b79e-c1e3ed3803c0
Gunn, R.
c8d5dbda-af74-41cc-8d76-b39444285778
Al Hakim, Mohammad
983eec0e-e4c9-4ded-963a-35262a673188
Sun, Kai
2ace53c1-82cc-47e5-911e-898b143163d3
Ashburn, Peter
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Chong, Harold
795aa67f-29e5-480f-b1bc-9bd5c0d558e1

Mohamed Sultan, Suhana, Clark, Owain, Ben Masaud, Taha, Fang, Q., Gunn, R., Al Hakim, Mohammad, Sun, Kai, Ashburn, Peter and Chong, Harold (2011) Remote Plasma Atomic Layer Deposition of ZnO for Thin Film Electronic Applications. Micro and Nano Engineering, Germany. 19 - 23 Sep 2011. (In Press)

Record type: Conference or Workshop Item (Poster)

Abstract

This paper describes a systematic approach to analyze the simultaneous impact of various reactant plasma parameters of remote plasma ALD on the ZnO thin film properties. Particular emphasis is placed on the film stoichiometry which affects the electrical properties of the thin film. Design of Experiment (DOE) is used to study the impact of the oxygen plasma parameters such as the RF power, pressure and plasma time to realize semiconductor quality of ZnO thin film. Based on the optimized plasma condition, staggered bottom-gate TFTs were fabricated and its electrical characteristics were measured.

Full text not available from this repository.

More information

Accepted/In Press date: 19 September 2011
Additional Information: Event Dates: 19-23 September 2011
Venue - Dates: Micro and Nano Engineering, Germany, 2011-09-19 - 2011-09-23
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 272932
URI: https://eprints.soton.ac.uk/id/eprint/272932
PURE UUID: 504c26ff-8223-4688-ba67-c14904a0b48e
ORCID for Harold Chong: ORCID iD orcid.org/0000-0002-7110-5761

Catalogue record

Date deposited: 17 Oct 2011 08:20
Last modified: 06 Jun 2018 12:37

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