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Raman Spectroscopy and Electrical Characterisation of Reactive Ion Etched Multilayer Graphene

Raman Spectroscopy and Electrical Characterisation of Reactive Ion Etched Multilayer Graphene
Raman Spectroscopy and Electrical Characterisation of Reactive Ion Etched Multilayer Graphene
A reactive ion etching process (RIE) of multi-layer graphene (MLG) has been developed to obtain tri-layer (TLG) or bi-layer graphene (BLG). A controllable graphene etch rate of 0.19 nm/sec has been achieved by using oxygen plasma. Graphene D, G and 2D band characteristics have been obtained by Raman spectroscopy and rapid thermal annealing (RTA) has shown to reduce defect band in etched graphene layer. A two terminals device with etched tri-layer graphene and back gate has been fabricated. Measurement shows drain current variation with gate voltage bias and mobility of 52 cm2/V-s has been achieved.
Johari, Z.
190dec04-7378-4eff-a3e4-971b5be706df
Schmidt, Marek E.
e4489af8-f4ff-4e8d-b7d2-8ca34cb51445
de Groot, Kees
92cd2e02-fcc4-43da-8816-c86f966be90c
Ismail, R.
f1924feb-b458-48a7-8b0b-494270d97c16
Chong, Harold
795aa67f-29e5-480f-b1bc-9bd5c0d558e1
Johari, Z.
190dec04-7378-4eff-a3e4-971b5be706df
Schmidt, Marek E.
e4489af8-f4ff-4e8d-b7d2-8ca34cb51445
de Groot, Kees
92cd2e02-fcc4-43da-8816-c86f966be90c
Ismail, R.
f1924feb-b458-48a7-8b0b-494270d97c16
Chong, Harold
795aa67f-29e5-480f-b1bc-9bd5c0d558e1

Johari, Z., Schmidt, Marek E., de Groot, Kees, Ismail, R. and Chong, Harold (2011) Raman Spectroscopy and Electrical Characterisation of Reactive Ion Etched Multilayer Graphene. Micro and Nano Engineering, Germany. 19 - 23 Sep 2011. (In Press)

Record type: Conference or Workshop Item (Poster)

Abstract

A reactive ion etching process (RIE) of multi-layer graphene (MLG) has been developed to obtain tri-layer (TLG) or bi-layer graphene (BLG). A controllable graphene etch rate of 0.19 nm/sec has been achieved by using oxygen plasma. Graphene D, G and 2D band characteristics have been obtained by Raman spectroscopy and rapid thermal annealing (RTA) has shown to reduce defect band in etched graphene layer. A two terminals device with etched tri-layer graphene and back gate has been fabricated. Measurement shows drain current variation with gate voltage bias and mobility of 52 cm2/V-s has been achieved.

Full text not available from this repository.

More information

Accepted/In Press date: 19 September 2011
Additional Information: Event Dates: 19-23 September 2011
Venue - Dates: Micro and Nano Engineering, Germany, 2011-09-19 - 2011-09-23
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 272933
URI: https://eprints.soton.ac.uk/id/eprint/272933
PURE UUID: f1573cd1-ad01-493e-ad13-db7853b7561f
ORCID for Kees de Groot: ORCID iD orcid.org/0000-0002-3850-7101
ORCID for Harold Chong: ORCID iD orcid.org/0000-0002-7110-5761

Catalogue record

Date deposited: 17 Oct 2011 08:25
Last modified: 06 Jun 2018 12:50

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