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Degradation Processes of Voids in Silicone Rubber under Applied AC Fields

Degradation Processes of Voids in Silicone Rubber under Applied AC Fields
Degradation Processes of Voids in Silicone Rubber under Applied AC Fields
This paper is concerned with an experimental study into the degradation processes that occur when voids in solid dielectric materials experience high applied electric fields. A method has been developed for manufacturing 2mm thick samples of silicone resin that contain a single void of 1mm diameter . Five Samples are simultaneously electrically stressed under an applied ac sinusoidal voltage of 12kV for 6 hours that is then increased to 15kV until a sample fails. During the stressing period, PD data is regularly acquired [1]. The remaining 4 samples are then inspected for signs of degradation. A typical result of a degraded sample is shown in Figure 1. The experiment is repeatable and the obtained degraded samples have been analysed using Raman spectroscopy to identify the chemical content of the degraded areas at the void /silicone rubber interface. Initial results indicate that the degradation is a pre-cursor to the development of a bow-tie electrical tree [2] , although further research is required to confirm this.
34
Bai, T
e0013ceb-f473-4c49-b6cd-24861c9caa5e
Lewin, P L
78b4fc49-1cb3-4db9-ba90-3ae70c0f639e
Bai, T
e0013ceb-f473-4c49-b6cd-24861c9caa5e
Lewin, P L
78b4fc49-1cb3-4db9-ba90-3ae70c0f639e

Bai, T and Lewin, P L (2012) Degradation Processes of Voids in Silicone Rubber under Applied AC Fields. The Fifth UHVnet Colloquium, United Kingdom. 18 - 19 Jan 2012. p. 34 .

Record type: Conference or Workshop Item (Paper)

Abstract

This paper is concerned with an experimental study into the degradation processes that occur when voids in solid dielectric materials experience high applied electric fields. A method has been developed for manufacturing 2mm thick samples of silicone resin that contain a single void of 1mm diameter . Five Samples are simultaneously electrically stressed under an applied ac sinusoidal voltage of 12kV for 6 hours that is then increased to 15kV until a sample fails. During the stressing period, PD data is regularly acquired [1]. The remaining 4 samples are then inspected for signs of degradation. A typical result of a degraded sample is shown in Figure 1. The experiment is repeatable and the obtained degraded samples have been analysed using Raman spectroscopy to identify the chemical content of the degraded areas at the void /silicone rubber interface. Initial results indicate that the degradation is a pre-cursor to the development of a bow-tie electrical tree [2] , although further research is required to confirm this.

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More information

Published date: 18 January 2012
Additional Information: Event Dates: 18-19 January 2012
Venue - Dates: The Fifth UHVnet Colloquium, United Kingdom, 2012-01-18 - 2012-01-19
Organisations: Electronics & Computer Science, EEE

Identifiers

Local EPrints ID: 273130
URI: https://eprints.soton.ac.uk/id/eprint/273130
PURE UUID: 02e95742-9c27-42a9-90fb-cf442199d3d4

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Date deposited: 20 Jan 2012 16:39
Last modified: 30 Jul 2019 18:57

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