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Electrical characteristics of top-down ZnO nanowire transistors using remote plasma ALD

Electrical characteristics of top-down ZnO nanowire transistors using remote plasma ALD
Electrical characteristics of top-down ZnO nanowire transistors using remote plasma ALD
Top-down fabrication is used to produce ZnO nanowires by remote plasma atomic layer deposition over a SiO2 pillar and anisotropic dry etching. Nanowire field-effect transistors (FETs), with channel lengths in the range of 1.3–18.6 µm, are then fabricated using these 80 nm × 40 nm nanowires. Measured electrical results show n-type enhancement behavior and a breakdown voltage ~75 V at all channel lengths. This is the first report of high-voltage operation for ZnO nanowire FETs. Reproducible well-behaved electrical characteristics are obtained, and the drain current scales with 1/L, as expected for long-channel FETs. A respectable ION/IOFF ratio of 2 × 106 is obtained.
0741-3106
203-205
Mohamed Sultan, Suhana
f789d611-a667-4d61-82b8-3902158b29c2
Sun, Kai
2ace53c1-82cc-47e5-911e-898b143163d3
Clark, Owain
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Ben Masaud, Taha
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Fang, Q.
fc0ef676-b862-4517-b79e-c1e3ed3803c0
Gunn, R.
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Partridge, J.
09a360d3-f8d1-4763-80a8-062ea6ae7329
Allen, M. W.
dad71f71-afd7-4436-8eab-bb4e2c6fc64d
Ashburn, Peter
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Chong, Harold
795aa67f-29e5-480f-b1bc-9bd5c0d558e1
Mohamed Sultan, Suhana
f789d611-a667-4d61-82b8-3902158b29c2
Sun, Kai
2ace53c1-82cc-47e5-911e-898b143163d3
Clark, Owain
d2b922ab-3d98-42fc-97d9-042644666f73
Ben Masaud, Taha
931dee8c-d8ac-4519-96ff-fa0813b4da59
Fang, Q.
fc0ef676-b862-4517-b79e-c1e3ed3803c0
Gunn, R.
c8d5dbda-af74-41cc-8d76-b39444285778
Partridge, J.
09a360d3-f8d1-4763-80a8-062ea6ae7329
Allen, M. W.
dad71f71-afd7-4436-8eab-bb4e2c6fc64d
Ashburn, Peter
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Chong, Harold
795aa67f-29e5-480f-b1bc-9bd5c0d558e1

Mohamed Sultan, Suhana, Sun, Kai, Clark, Owain, Ben Masaud, Taha, Fang, Q., Gunn, R., Partridge, J., Allen, M. W., Ashburn, Peter and Chong, Harold (2012) Electrical characteristics of top-down ZnO nanowire transistors using remote plasma ALD. IEEE Electron Device Letters, 33 (2), 203-205. (doi:10.1109/LED.2011.2174607).

Record type: Article

Abstract

Top-down fabrication is used to produce ZnO nanowires by remote plasma atomic layer deposition over a SiO2 pillar and anisotropic dry etching. Nanowire field-effect transistors (FETs), with channel lengths in the range of 1.3–18.6 µm, are then fabricated using these 80 nm × 40 nm nanowires. Measured electrical results show n-type enhancement behavior and a breakdown voltage ~75 V at all channel lengths. This is the first report of high-voltage operation for ZnO nanowire FETs. Reproducible well-behaved electrical characteristics are obtained, and the drain current scales with 1/L, as expected for long-channel FETs. A respectable ION/IOFF ratio of 2 × 106 is obtained.

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Published date: February 2012
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 273208
URI: https://eprints.soton.ac.uk/id/eprint/273208
ISSN: 0741-3106
PURE UUID: d5f87fd2-cb72-4b0c-a1e2-cfdaf0a46e8d
ORCID for Harold Chong: ORCID iD orcid.org/0000-0002-7110-5761

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Date deposited: 13 Feb 2012 14:24
Last modified: 20 Jul 2019 00:51

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