Electrical characteristics of top-down ZnO nanowire transistors using remote plasma ALD
Electrical characteristics of top-down ZnO nanowire transistors using remote plasma ALD
Top-down fabrication is used to produce ZnO nanowires by remote plasma atomic layer deposition over a SiO2 pillar and anisotropic dry etching. Nanowire field-effect transistors (FETs), with channel lengths in the range of 1.3–18.6 µm, are then fabricated using these 80 nm × 40 nm nanowires. Measured electrical results show n-type enhancement behavior and a breakdown voltage ~75 V at all channel lengths. This is the first report of high-voltage operation for ZnO nanowire FETs. Reproducible well-behaved electrical characteristics are obtained, and the drain current scales with 1/L, as expected for long-channel FETs. A respectable ION/IOFF ratio of 2 × 106 is obtained.
203-205
Sultan, S.M.
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Sun, K.
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Clark, O.D.
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Masaud, T.B.
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Fang, Q.
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Gunn, R.
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Partridge, J.
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Allen, M. W.
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Ashburn, P.
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Chong, H.M.H.
795aa67f-29e5-480f-b1bc-9bd5c0d558e1
Sultan, S.M.
f789d611-a667-4d61-82b8-3902158b29c2
Sun, K.
b7c648a3-7be8-4613-9d4d-1bf937fb487b
Clark, O.D.
d2b922ab-3d98-42fc-97d9-042644666f73
Masaud, T.B.
931dee8c-d8ac-4519-96ff-fa0813b4da59
Fang, Q.
fc0ef676-b862-4517-b79e-c1e3ed3803c0
Gunn, R.
c8d5dbda-af74-41cc-8d76-b39444285778
Partridge, J.
09a360d3-f8d1-4763-80a8-062ea6ae7329
Allen, M. W.
dad71f71-afd7-4436-8eab-bb4e2c6fc64d
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Chong, H.M.H.
795aa67f-29e5-480f-b1bc-9bd5c0d558e1
Sultan, S.M., Sun, K., Clark, O.D., Masaud, T.B., Fang, Q., Gunn, R., Partridge, J., Allen, M. W., Ashburn, P. and Chong, H.M.H.
(2011)
Electrical characteristics of top-down ZnO nanowire transistors using remote plasma ALD.
IEEE Electron Device Letters, 33 (2), .
(doi:10.1109/LED.2011.2174607).
Abstract
Top-down fabrication is used to produce ZnO nanowires by remote plasma atomic layer deposition over a SiO2 pillar and anisotropic dry etching. Nanowire field-effect transistors (FETs), with channel lengths in the range of 1.3–18.6 µm, are then fabricated using these 80 nm × 40 nm nanowires. Measured electrical results show n-type enhancement behavior and a breakdown voltage ~75 V at all channel lengths. This is the first report of high-voltage operation for ZnO nanowire FETs. Reproducible well-behaved electrical characteristics are obtained, and the drain current scales with 1/L, as expected for long-channel FETs. A respectable ION/IOFF ratio of 2 × 106 is obtained.
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e-pub ahead of print date: 12 December 2011
Organisations:
Nanoelectronics and Nanotechnology
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Local EPrints ID: 273208
URI: http://eprints.soton.ac.uk/id/eprint/273208
ISSN: 0741-3106
PURE UUID: d5f87fd2-cb72-4b0c-a1e2-cfdaf0a46e8d
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Date deposited: 13 Feb 2012 14:24
Last modified: 15 Mar 2024 03:30
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Author:
S.M. Sultan
Author:
T.B. Masaud
Author:
Q. Fang
Author:
R. Gunn
Author:
J. Partridge
Author:
M. W. Allen
Author:
H.M.H. Chong
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