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Structural phase transition as a mechanism for broadband, low-threshold reflectivity switching in gallium

Structural phase transition as a mechanism for broadband, low-threshold reflectivity switching in gallium
Structural phase transition as a mechanism for broadband, low-threshold reflectivity switching in gallium
We report that a nanoscale laser-induced structural phase transition involving just a few nanometers of gallium at an interface with silica can drive reversible changes in the optical properties of the interface in a very broad spectral range from 440 to 680 nm and beyond. At temperatures up to 15° below the melting point of gallium (30°C) 3 ns excitation pulses, with fluences of just a few mJ/cm², are sufficient to induce reflectivity increases of up to 40%.
Optical properties, Surfaces and interfaces, Phase transition, Gallium
0003-6951
2375-2377
MacDonald, K. F.
76c84116-aad1-4973-b917-7ca63935dba5
Fedotov, V. A.
3725f5cc-2d0b-4e61-95c5-26d187c84f25
Zheludev, N. I.
32fb6af7-97e4-4d11-bca6-805745e40cc6
Zhdanov, B. V.
0aff414e-03e1-4990-9c9f-4f97ead43a61
Knize, R. J.
ae0332a5-142e-428f-8706-7013c4912f97
MacDonald, K. F.
76c84116-aad1-4973-b917-7ca63935dba5
Fedotov, V. A.
3725f5cc-2d0b-4e61-95c5-26d187c84f25
Zheludev, N. I.
32fb6af7-97e4-4d11-bca6-805745e40cc6
Zhdanov, B. V.
0aff414e-03e1-4990-9c9f-4f97ead43a61
Knize, R. J.
ae0332a5-142e-428f-8706-7013c4912f97

MacDonald, K. F., Fedotov, V. A., Zheludev, N. I., Zhdanov, B. V. and Knize, R. J. (2001) Structural phase transition as a mechanism for broadband, low-threshold reflectivity switching in gallium. Applied Physics Letters, 79 (15), 2375-2377. (doi:10.1063/1.1409335).

Record type: Article

Abstract

We report that a nanoscale laser-induced structural phase transition involving just a few nanometers of gallium at an interface with silica can drive reversible changes in the optical properties of the interface in a very broad spectral range from 440 to 680 nm and beyond. At temperatures up to 15° below the melting point of gallium (30°C) 3 ns excitation pulses, with fluences of just a few mJ/cm², are sufficient to induce reflectivity increases of up to 40%.

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More information

Published date: 8 October 2001
Keywords: Optical properties, Surfaces and interfaces, Phase transition, Gallium

Identifiers

Local EPrints ID: 28675
URI: http://eprints.soton.ac.uk/id/eprint/28675
DOI: doi:10.1063/1.1409335
ISSN: 0003-6951
PURE UUID: 5d9cbaa7-a979-4dd3-b77f-9969ef801c16
ORCID for K. F. MacDonald: ORCID iD orcid.org/0000-0002-3877-2976
ORCID for N. I. Zheludev: ORCID iD orcid.org/0000-0002-1013-6636

Catalogue record

Date deposited: 08 May 2006
Last modified: 16 Mar 2024 03:10

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Contributors

Author: K. F. MacDonald ORCID iD
Author: V. A. Fedotov
Author: N. I. Zheludev ORCID iD
Author: B. V. Zhdanov
Author: R. J. Knize

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