Large area plasma-enhanced chemical vapor deposition of nanocrystalline graphite on insulator for electronic device application
Large area plasma-enhanced chemical vapor deposition of nanocrystalline graphite on insulator for electronic device application
This paper reports on large area plasma-enhanced chemical vapor deposition (PECVD) of nanocrystalline graphite (NCG) on thermally grown SiO2 wafer, quartz and sapphire substrates. Grown films are evaluated using Raman spectroscopy, ellipsometry, scanning electron microscopy (SEM) and atomic force microscopy (AFM). Electrical characterization and optical transmission measurements indicate promising properties of this material for use as transparent electrodes and for electronic device application. A plasma-based etch process for NCG has been developed.
Schmidt, Marek E.
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Xu, Cigang
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Cooke, Mike
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Mizuta, Hiroshi
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Chong, H.M.H.
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Schmidt, Marek E.
e4489af8-f4ff-4e8d-b7d2-8ca34cb51445
Xu, Cigang
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Cooke, Mike
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Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Chong, H.M.H.
795aa67f-29e5-480f-b1bc-9bd5c0d558e1
Schmidt, Marek E., Xu, Cigang, Cooke, Mike, Mizuta, Hiroshi and Chong, H.M.H.
(2012)
Large area plasma-enhanced chemical vapor deposition of nanocrystalline graphite on insulator for electronic device application.
Graphene 2012, Brussels, Belgium.
10 - 13 Apr 2012.
(Submitted)
Record type:
Conference or Workshop Item
(Other)
Abstract
This paper reports on large area plasma-enhanced chemical vapor deposition (PECVD) of nanocrystalline graphite (NCG) on thermally grown SiO2 wafer, quartz and sapphire substrates. Grown films are evaluated using Raman spectroscopy, ellipsometry, scanning electron microscopy (SEM) and atomic force microscopy (AFM). Electrical characterization and optical transmission measurements indicate promising properties of this material for use as transparent electrodes and for electronic device application. A plasma-based etch process for NCG has been developed.
Text
Schmidt_grapheneconf2012.pdf
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Submitted date: March 2012
Venue - Dates:
Graphene 2012, Brussels, Belgium, 2012-04-10 - 2012-04-13
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 335890
URI: http://eprints.soton.ac.uk/id/eprint/335890
PURE UUID: 0fc6b9b1-dc2b-4c26-b2ca-43bc03a685ea
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Date deposited: 14 Mar 2012 11:46
Last modified: 15 Mar 2024 03:30
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Contributors
Author:
Marek E. Schmidt
Author:
Cigang Xu
Author:
Mike Cooke
Author:
Hiroshi Mizuta
Author:
H.M.H. Chong
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