Fabrication of photonic crystals in rare-earth doped chalcogenide glass films for enhanced upconversion


Pollard, M.E., Knight, K.J., Parker, G.J., Hewak, D.W. and Charlton, M.D.B., (2012) Fabrication of photonic crystals in rare-earth doped chalcogenide glass films for enhanced upconversion Jiang, Shibin, Digonnet, Michel J.F. and Dries, J. Christopher (eds.) At SPIE Photonics West 2012, United States. 21 - 26 Jan 2012. (doi:10.1117/12.908014).

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Description/Abstract

Gallium lanthanum oxysulfide (GLSO) is a promising host material for observing strong upconversion emission from trivalent rare-earth ions such as erbium (Er3+). Its attractive properties include high rare-earth solubility due to the lanthanum content of the glass former, a high refractive index (n = 2.2 at 550nm) for high radiative efficiency, and a low maximum phonon energy of approximately 425cm-1. Photonic crystals meanwhile can provide controlled light extraction, and may be capable of suppressing unwanted IR emission from lower lying metastable states. Here, we describe the fabrication of photonic crystals in annealed films of Er3+-doped GLSO deposited by RF sputtering. The most intense visible upconversion emission is observed in films annealed at 550°C, close to the bulk glass transition temperature. Hexagonal lattice photonic crystals are subsequently milled into the films using a focused ion beam (FIB). The milling parameters are optimized to produce the most vertical sidewall profile.

Item Type: Conference or Workshop Item (Paper)
Digital Object Identifier (DOI): doi:10.1117/12.908014
Additional Information: #8257
Venue - Dates: SPIE Photonics West 2012, United States, 2012-01-21 - 2012-01-26
Related URLs:
Subjects:
Organisations: Optoelectronics Research Centre, Electronics & Computer Science
ePrint ID: 336500
Date :
Date Event
2012e-pub ahead of print
Date Deposited: 28 Mar 2012 13:35
Last Modified: 17 Apr 2017 17:22
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/336500

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