High dielectric tunability in lead niobate pyrochlore films
High dielectric tunability in lead niobate pyrochlore films
High throughput physical vapor deposition has been used to grow crystalline PbnNb2O5+n (0.6?<?n?<?4.6) thin films on a single chip. Relative permittivity (?r) and dielectric loss (tan ?) were frequency independent between 100?Hz and 1?MHz and ?60?°C–100?°C. Dielectric tunability achieved a maximum in the cubic pyrochlore phase (Pb1.2Nb2O6.2, PN, Pb???38%) of ?26% (0.44 MV/cm). In comparison to barium strontium titanate (BST) and bismuth zinc niobate (BZN), PN exhibited attractive tan ????0.0009 (0.013–0.005 in BST and 0.008–0.0005 in BZN), comparable or superior ?r of 419 (450 in BST and 160–220 in BZN) and 26% tunability (?50% in BST and 3.5% in BZN at equivalent fields). PN is thus considered an ideal candidate for tunable device applications.
dialectric losses, dielectric thin films, lead compounds, permittivity, thin film devices, vapour decomposition
82901-82903
Mirsaneh, Mehdi
7deb15ab-a6d4-4647-bbfc-60a0c985b752
Hayden, Brian E.
aea74f68-2264-4487-9d84-5b12ddbbb331
Furman, E.
f4639914-341e-4874-9df2-becae3317836
Perini, S.
8c0caa88-78bf-4e04-977d-55fb4d2e09a8
Lanagan, M.T.
042f7ff2-7b19-4043-beb9-f99860eebbca
Reaney, I.M.
cf9964df-bbfc-4057-8cf7-2dfa12eac58c
21 February 2012
Mirsaneh, Mehdi
7deb15ab-a6d4-4647-bbfc-60a0c985b752
Hayden, Brian E.
aea74f68-2264-4487-9d84-5b12ddbbb331
Furman, E.
f4639914-341e-4874-9df2-becae3317836
Perini, S.
8c0caa88-78bf-4e04-977d-55fb4d2e09a8
Lanagan, M.T.
042f7ff2-7b19-4043-beb9-f99860eebbca
Reaney, I.M.
cf9964df-bbfc-4057-8cf7-2dfa12eac58c
Mirsaneh, Mehdi, Hayden, Brian E., Furman, E., Perini, S., Lanagan, M.T. and Reaney, I.M.
(2012)
High dielectric tunability in lead niobate pyrochlore films.
Applied Physics Letters, 100, .
(doi:10.1063/1.3687722).
Abstract
High throughput physical vapor deposition has been used to grow crystalline PbnNb2O5+n (0.6?<?n?<?4.6) thin films on a single chip. Relative permittivity (?r) and dielectric loss (tan ?) were frequency independent between 100?Hz and 1?MHz and ?60?°C–100?°C. Dielectric tunability achieved a maximum in the cubic pyrochlore phase (Pb1.2Nb2O6.2, PN, Pb???38%) of ?26% (0.44 MV/cm). In comparison to barium strontium titanate (BST) and bismuth zinc niobate (BZN), PN exhibited attractive tan ????0.0009 (0.013–0.005 in BST and 0.008–0.0005 in BZN), comparable or superior ?r of 419 (450 in BST and 160–220 in BZN) and 26% tunability (?50% in BST and 3.5% in BZN at equivalent fields). PN is thus considered an ideal candidate for tunable device applications.
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Published date: 21 February 2012
Keywords:
dialectric losses, dielectric thin films, lead compounds, permittivity, thin film devices, vapour decomposition
Organisations:
Electrochemistry
Identifiers
Local EPrints ID: 337044
URI: http://eprints.soton.ac.uk/id/eprint/337044
ISSN: 0003-6951
PURE UUID: 28366a67-f71a-45ba-8eff-ab2bacf58819
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Date deposited: 16 Apr 2012 15:19
Last modified: 15 Mar 2024 02:36
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Contributors
Author:
Mehdi Mirsaneh
Author:
E. Furman
Author:
S. Perini
Author:
M.T. Lanagan
Author:
I.M. Reaney
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