50-Gb/s silicon optical modulator
50-Gb/s silicon optical modulator
Optical modulators formed in silicon are the keystone to many low cost optical applications. Increasing the data rate of the modulator benefits the efficiency of channel usage and decreases power consumption per bit of data. Silicon-based modulators which operate via carrier depletion have to the present been demonstrated at data rates up to 40 Gb/s; however, here we present for the first time optical modulation at 50 Gb/s with a 3.1-dB extinction ratio obtained from carrier depletion based phase shifter incorporated in a Mach-Zehnder interferometer. A corresponding optical insertion loss of approximately 7.4 dB is measured.
234-236
Thomson, David
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Gardes, Frederic Y.
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Fedeli, Jean-Marc
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Zlatanović, Sanja
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Hu, Youfang
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Kuo, Bill Ping Piu
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Myslivets, Evgeny
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Alic, Nikola
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Radic, Stojan
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Mashanovich, Goran Z.
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Reed, Graham T.
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15 February 2012
Thomson, David
17c1626c-2422-42c6-98e0-586ae220bcda
Gardes, Frederic Y.
7a49fc6d-dade-4099-b016-c60737cb5bb2
Fedeli, Jean-Marc
5ad7c53a-9334-4b13-bd8e-9bef92753030
Zlatanović, Sanja
33ac204b-87eb-4968-88f7-707caf4ef79a
Hu, Youfang
38fe48b3-1609-4834-ad54-dc823e3a98b3
Kuo, Bill Ping Piu
59078f88-768f-4282-8cbe-465a3cc9e05f
Myslivets, Evgeny
678f7434-e55f-4600-a240-e87a81c3c8be
Alic, Nikola
75f1fc41-d80a-442e-9491-3f93acc1e004
Radic, Stojan
5c7b9d8d-e3c3-4cb5-a1d6-9a724be25d0a
Mashanovich, Goran Z.
c806e262-af80-4836-b96f-319425060051
Reed, Graham T.
ca08dd60-c072-4d7d-b254-75714d570139
Thomson, David, Gardes, Frederic Y., Fedeli, Jean-Marc, Zlatanović, Sanja, Hu, Youfang, Kuo, Bill Ping Piu, Myslivets, Evgeny, Alic, Nikola, Radic, Stojan, Mashanovich, Goran Z. and Reed, Graham T.
(2012)
50-Gb/s silicon optical modulator.
IEEE Photonics Technology Letters, 24 (4), .
(doi:10.1109/LPT.2011.2177081).
Abstract
Optical modulators formed in silicon are the keystone to many low cost optical applications. Increasing the data rate of the modulator benefits the efficiency of channel usage and decreases power consumption per bit of data. Silicon-based modulators which operate via carrier depletion have to the present been demonstrated at data rates up to 40 Gb/s; however, here we present for the first time optical modulation at 50 Gb/s with a 3.1-dB extinction ratio obtained from carrier depletion based phase shifter incorporated in a Mach-Zehnder interferometer. A corresponding optical insertion loss of approximately 7.4 dB is measured.
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More information
e-pub ahead of print date: 22 November 2011
Published date: 15 February 2012
Organisations:
Optoelectronics Research Centre, Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 337742
URI: http://eprints.soton.ac.uk/id/eprint/337742
ISSN: 1041-1135
PURE UUID: 1cc741e6-9ce2-49b3-a7ee-d7bee84f25f0
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Date deposited: 03 May 2012 10:17
Last modified: 29 Oct 2024 02:45
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Contributors
Author:
David Thomson
Author:
Frederic Y. Gardes
Author:
Jean-Marc Fedeli
Author:
Sanja Zlatanović
Author:
Youfang Hu
Author:
Bill Ping Piu Kuo
Author:
Evgeny Myslivets
Author:
Nikola Alic
Author:
Stojan Radic
Author:
Goran Z. Mashanovich
Author:
Graham T. Reed
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