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High speed silicon electro-optical modulators enhanced via slow light propagation

High speed silicon electro-optical modulators enhanced via slow light propagation
High speed silicon electro-optical modulators enhanced via slow light propagation
While current optical communication networks efficiently carry and process huge amounts of digital information over large and medium distances, silicon photonics technology has the capacity to meet the ceaselessly increasing demand for bandwidth via energy efficient, inexpensive and mass producible short range optical interconnects. In this context, handling electrical-to-optical data conversion through compact and high speed electro-optical modulators is of paramount importance. To tackle these challenges, we combine the attractive properties of slow light propagation in a nanostructured periodic waveguide together with a high speed semiconductor pn diode, and demonstrate a highly efficient and mass manufacturable 500 µm-long silicon electro-optical device, exhibiting error free modulation up to 20 Gbit/s. These results, supported by modulation rate capabilities reaching 40 Gbit/s, pave a foreseeable way towards dense, low power and ultra fast integrated networks-on-chip for future chip-scale high performance computing systems.
1094-4087
20876-20885
Brimont, A.
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Thomson, D.
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Sanchis, P.
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Herrera, J.
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Gardes, F.Y.
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Fedeli, J.M.
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Reed, G.T.
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Martí, J.
521e2fe7-ba8d-425e-af0e-06ebe9dc7077
Brimont, A.
b0cb00ac-0328-4225-b813-b27732baebf2
Thomson, D.
17c1626c-2422-42c6-98e0-586ae220bcda
Sanchis, P.
a99dd0e8-6810-42dc-abed-f8a4ae52360e
Herrera, J.
7f4d47a1-d340-4c8f-904b-123f89e7bd73
Gardes, F.Y.
7a49fc6d-dade-4099-b016-c60737cb5bb2
Fedeli, J.M.
29a8abed-e7c4-484b-bc28-39da9f42788f
Reed, G.T.
ca08dd60-c072-4d7d-b254-75714d570139
Martí, J.
521e2fe7-ba8d-425e-af0e-06ebe9dc7077

Brimont, A., Thomson, D., Sanchis, P., Herrera, J., Gardes, F.Y., Fedeli, J.M., Reed, G.T. and Martí, J. (2011) High speed silicon electro-optical modulators enhanced via slow light propagation. Optics Express, 19 (21), 20876-20885. (doi:10.1364/OE.19.020876).

Record type: Article

Abstract

While current optical communication networks efficiently carry and process huge amounts of digital information over large and medium distances, silicon photonics technology has the capacity to meet the ceaselessly increasing demand for bandwidth via energy efficient, inexpensive and mass producible short range optical interconnects. In this context, handling electrical-to-optical data conversion through compact and high speed electro-optical modulators is of paramount importance. To tackle these challenges, we combine the attractive properties of slow light propagation in a nanostructured periodic waveguide together with a high speed semiconductor pn diode, and demonstrate a highly efficient and mass manufacturable 500 µm-long silicon electro-optical device, exhibiting error free modulation up to 20 Gbit/s. These results, supported by modulation rate capabilities reaching 40 Gbit/s, pave a foreseeable way towards dense, low power and ultra fast integrated networks-on-chip for future chip-scale high performance computing systems.

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Accepted/In Press date: 25 July 2011
e-pub ahead of print date: 5 October 2011
Published date: 10 October 2011
Organisations: Optoelectronics Research Centre, Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 337774
URI: https://eprints.soton.ac.uk/id/eprint/337774
ISSN: 1094-4087
PURE UUID: 68e5f37d-f674-487f-bb23-4e5714248ff4

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Date deposited: 03 May 2012 14:11
Last modified: 28 Oct 2019 21:17

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Contributors

Author: A. Brimont
Author: D. Thomson
Author: P. Sanchis
Author: J. Herrera
Author: F.Y. Gardes
Author: J.M. Fedeli
Author: G.T. Reed
Author: J. Martí

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