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40 Gb/s silicon photonics modulator for TE and TM polarisations

40 Gb/s silicon photonics modulator for TE and TM polarisations
40 Gb/s silicon photonics modulator for TE and TM polarisations
A key device in future high speed short reach interconnect technology will be the optical modulator. These devices, in silicon, have experienced dramatic improvements over the last 6 years and the modulation bandwidth has increased from a few tens of MHz to over 30 GHz. However, the demands of optical interconnects are significant. Here we describe an approach based on a self-aligned wrap around p-n junction structure embedded in a silicon waveguide that can produce high-speed optical phase modulation, whilst at the same time, capable of a high extinction ratio. An all-silicon optical modulator using a CMOS compatible fabrication process with a data rate of 40 Gb/s and extinction ratio up to approximately 6.5 dB for TE and TM polarisations is demonstrated. This technology is not only compatible with conventional complementary MOS (CMOS) processing, but is also intended to simplify and improve the reliability of, the fabrication process.
1094-4087
11804-11814
Gardes, F.Y.
7a49fc6d-dade-4099-b016-c60737cb5bb2
Thomson, D.J.
17c1626c-2422-42c6-98e0-586ae220bcda
Emerson, N.G.
cd3d7ece-48af-4103-a3f4-db0da189cd94
Reed, G.T.
ca08dd60-c072-4d7d-b254-75714d570139
Gardes, F.Y.
7a49fc6d-dade-4099-b016-c60737cb5bb2
Thomson, D.J.
17c1626c-2422-42c6-98e0-586ae220bcda
Emerson, N.G.
cd3d7ece-48af-4103-a3f4-db0da189cd94
Reed, G.T.
ca08dd60-c072-4d7d-b254-75714d570139

Gardes, F.Y., Thomson, D.J., Emerson, N.G. and Reed, G.T. (2011) 40 Gb/s silicon photonics modulator for TE and TM polarisations. Optics Express, 19 (12), 11804-11814. (doi:10.1364/OE.19.011804).

Record type: Article

Abstract

A key device in future high speed short reach interconnect technology will be the optical modulator. These devices, in silicon, have experienced dramatic improvements over the last 6 years and the modulation bandwidth has increased from a few tens of MHz to over 30 GHz. However, the demands of optical interconnects are significant. Here we describe an approach based on a self-aligned wrap around p-n junction structure embedded in a silicon waveguide that can produce high-speed optical phase modulation, whilst at the same time, capable of a high extinction ratio. An all-silicon optical modulator using a CMOS compatible fabrication process with a data rate of 40 Gb/s and extinction ratio up to approximately 6.5 dB for TE and TM polarisations is demonstrated. This technology is not only compatible with conventional complementary MOS (CMOS) processing, but is also intended to simplify and improve the reliability of, the fabrication process.

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More information

Accepted/In Press date: 25 May 2011
e-pub ahead of print date: 2 June 2011
Published date: 6 June 2011
Organisations: Optoelectronics Research Centre, Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 337776
URI: https://eprints.soton.ac.uk/id/eprint/337776
ISSN: 1094-4087
PURE UUID: d7b9b44c-d7ef-471e-a0f8-7678df3dcf43

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Date deposited: 03 May 2012 14:10
Last modified: 09 Dec 2019 20:07

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