High contrast 40Gbit/s optical modulation in silicon
High contrast 40Gbit/s optical modulation in silicon
Data interconnects are on the verge of a revolution. Electrical links are increasingly being pushed to their limits with the ever increasing demand for bandwidth. Data transmission in the optical domain is a leading candidate to satisfy this need. The optical modulator is key to most applications and increasing the data rate at which it operates is important for reducing power consumption, increasing channel bandwidth limitations and improving the efficiency of infrastructure usage. In this work silicon based devices of lengths 3.5mm and 1mm operating at 40Gbit/s are demonstrated with extinction ratios of up to 10dB and 3.5dB respectively. The efficiency and optical loss of the phase shifter is 2.7V.cm and 4dB/mm (or 4.5dB/mm including waveguide loss) respectively.
11507-11516
Thomson, David
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Gardes, F.Y.
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Hu, Y.
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Mashanovich, G.
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Fournier, M.
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Grosse, P.
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Fedeli, J-M.
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Reed, G.T.
ca08dd60-c072-4d7d-b254-75714d570139
6 June 2011
Thomson, David
17c1626c-2422-42c6-98e0-586ae220bcda
Gardes, F.Y.
7a49fc6d-dade-4099-b016-c60737cb5bb2
Hu, Y.
38fe48b3-1609-4834-ad54-dc823e3a98b3
Mashanovich, G.
c806e262-af80-4836-b96f-319425060051
Fournier, M.
8c77c58d-dd74-45f8-bd9c-92dd8f658b52
Grosse, P.
341829bc-1dd2-4872-9026-e7b414890943
Fedeli, J-M.
19c1ac66-4239-45f3-879b-c06653685550
Reed, G.T.
ca08dd60-c072-4d7d-b254-75714d570139
Thomson, David, Gardes, F.Y., Hu, Y., Mashanovich, G., Fournier, M., Grosse, P., Fedeli, J-M. and Reed, G.T.
(2011)
High contrast 40Gbit/s optical modulation in silicon.
Optics Express, 19 (12), .
(doi:10.1364/OE.19.011507).
(PMID:21716382)
Abstract
Data interconnects are on the verge of a revolution. Electrical links are increasingly being pushed to their limits with the ever increasing demand for bandwidth. Data transmission in the optical domain is a leading candidate to satisfy this need. The optical modulator is key to most applications and increasing the data rate at which it operates is important for reducing power consumption, increasing channel bandwidth limitations and improving the efficiency of infrastructure usage. In this work silicon based devices of lengths 3.5mm and 1mm operating at 40Gbit/s are demonstrated with extinction ratios of up to 10dB and 3.5dB respectively. The efficiency and optical loss of the phase shifter is 2.7V.cm and 4dB/mm (or 4.5dB/mm including waveguide loss) respectively.
Text
oe-19-12-11507
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Accepted/In Press date: 23 May 2011
e-pub ahead of print date: 31 May 2011
Published date: 6 June 2011
Organisations:
Optoelectronics Research Centre, Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 337777
URI: http://eprints.soton.ac.uk/id/eprint/337777
ISSN: 1094-4087
PURE UUID: 2edc460b-aeb0-4ea2-b437-614304ca6e00
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Date deposited: 03 May 2012 14:18
Last modified: 15 Mar 2024 03:40
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Author:
Y. Hu
Author:
M. Fournier
Author:
P. Grosse
Author:
J-M. Fedeli
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