Free-carrier electro-refraction and electro-absorption modulation predictions for silicon over the 1-14µm infrared wavelength range
Free-carrier electro-refraction and electro-absorption modulation predictions for silicon over the 1-14µm infrared wavelength range
We present relationships for the free-carrier-induced electrorefraction and electroabsorption in crystalline silicon over the 1-14 µm wavelength range. Electroabsorption modulation is calculated from impurity-doping spectra taken from the literature, and a Kramers-Kronig analysis of these spectra is used to predict electrorefraction modulation. More recent experimental results for terahertz absorption of silicon are also used to improve the commonly used 1.3 and 1.55 µm equations. We examine the wavelength dependence of electrorefraction and electroabsorption, finding that the predictions suggest longer wave modulator designs will, in many cases, be different from those used in the telecom range.
absorption, electrooptic modulators, semiconductor impurities, silicon
1171-1180
Nedeljković, Miloš
b64e21c2-1b95-479d-a35c-3456dff8c796
Soref, Richard
544d13a2-3d65-4ecf-9763-74e72d9e947a
Mashanovich, Goran Z.
c806e262-af80-4836-b96f-319425060051
December 2011
Nedeljković, Miloš
b64e21c2-1b95-479d-a35c-3456dff8c796
Soref, Richard
544d13a2-3d65-4ecf-9763-74e72d9e947a
Mashanovich, Goran Z.
c806e262-af80-4836-b96f-319425060051
Nedeljković, Miloš, Soref, Richard and Mashanovich, Goran Z.
(2011)
Free-carrier electro-refraction and electro-absorption modulation predictions for silicon over the 1-14µm infrared wavelength range.
IEEE Photonics Journal, 3 (6), .
(doi:10.1109/JPHOT.2011.2171930).
Abstract
We present relationships for the free-carrier-induced electrorefraction and electroabsorption in crystalline silicon over the 1-14 µm wavelength range. Electroabsorption modulation is calculated from impurity-doping spectra taken from the literature, and a Kramers-Kronig analysis of these spectra is used to predict electrorefraction modulation. More recent experimental results for terahertz absorption of silicon are also used to improve the commonly used 1.3 and 1.55 µm equations. We examine the wavelength dependence of electrorefraction and electroabsorption, finding that the predictions suggest longer wave modulator designs will, in many cases, be different from those used in the telecom range.
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Published date: December 2011
Keywords:
absorption, electrooptic modulators, semiconductor impurities, silicon
Organisations:
Optoelectronics Research Centre, Nanoelectronics and Nanotechnology, Photonic Systems Circuits & Sensors
Identifiers
Local EPrints ID: 337781
URI: http://eprints.soton.ac.uk/id/eprint/337781
ISSN: 1943-0655
PURE UUID: df073b80-1ad7-41e1-ba58-9bf074b4375f
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Date deposited: 03 May 2012 14:21
Last modified: 15 Mar 2024 03:49
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Author:
Richard Soref
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