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Deposition and characterization of CVD-grown Ge-Sb thin film device for phase-change memory application

Huang, C.C., Gholipour, B., Knight, K., Ou, J.Y. and Hewak, D.W. (2012) Deposition and characterization of CVD-grown Ge-Sb thin film device for phase-change memory application Advances in OptoElectronics, 2012, part 840348, pp. 1-7. (doi:10.1155/2012/840348).

Record type: Article


Germanium antimony (Ge-Sb) thin films with tuneable compositions have been fabricated on SiO2/Si, borosilicate glass, and quartz glass substrates by chemical vapour deposition (CVD). Deposition takes place at atmospheric pressure using metal chloride precursors at reaction temperatures between 750 and 875 °C. The compositions and structures of these thin films have been characterized by micro-Raman, scanning electron microscope (SEM) with energy dispersive X-ray analysis (EDX), and X-ray diffraction (XRD) techniques. A prototype Ge-Sb thin film phase-change memory device has been fabricated and reversible threshold and phase change switching demonstrated electrically, with a threshold voltage of 2.2 - 2.5 V. These CVD-grown Ge-Sb films show promise for applications such as phase change memory and optical, electronic and plasmonic switching.

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Published date: January 2012
Organisations: Optoelectronics Research Centre


Local EPrints ID: 337817
ISSN: 1687-563X
PURE UUID: 370cf2c6-9b39-4013-8503-cc865af6d148
ORCID for C.C. Huang: ORCID iD
ORCID for D.W. Hewak: ORCID iD

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Date deposited: 03 May 2012 15:42
Last modified: 02 Aug 2017 16:31

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Author: C.C. Huang ORCID iD
Author: B. Gholipour
Author: K. Knight
Author: J.Y. Ou ORCID iD
Author: D.W. Hewak ORCID iD

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