Deposition and characterization of CVD-grown Ge-Sb thin film device for phase-change memory application
Deposition and characterization of CVD-grown Ge-Sb thin film device for phase-change memory application
Germanium antimony (Ge-Sb) thin films with tuneable compositions have been fabricated on SiO2/Si, borosilicate glass, and quartz glass substrates by chemical vapour deposition (CVD). Deposition takes place at atmospheric pressure using metal chloride precursors at reaction temperatures between 750 and 875 °C. The compositions and structures of these thin films have been characterized by micro-Raman, scanning electron microscope (SEM) with energy dispersive X-ray analysis (EDX), and X-ray diffraction (XRD) techniques. A prototype Ge-Sb thin film phase-change memory device has been fabricated and reversible threshold and phase change switching demonstrated electrically, with a threshold voltage of 2.2 - 2.5 V. These CVD-grown Ge-Sb films show promise for applications such as phase change memory and optical, electronic and plasmonic switching.
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Huang, C.C.
825f7447-6d02-48f6-b95a-fa33da71f106
Gholipour, B.
c17bd62d-9df6-40e6-bc42-65272d97e559
Knight, K.
8834be4f-7dce-43fe-bafd-959e5893bd51
Ou, J.Y.
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Hewak, D.W.
87c80070-c101-4f7a-914f-4cc3131e3db0
January 2012
Huang, C.C.
825f7447-6d02-48f6-b95a-fa33da71f106
Gholipour, B.
c17bd62d-9df6-40e6-bc42-65272d97e559
Knight, K.
8834be4f-7dce-43fe-bafd-959e5893bd51
Ou, J.Y.
3fb703e3-b222-46d2-b4ee-75f296d9d64d
Hewak, D.W.
87c80070-c101-4f7a-914f-4cc3131e3db0
Huang, C.C., Gholipour, B., Knight, K., Ou, J.Y. and Hewak, D.W.
(2012)
Deposition and characterization of CVD-grown Ge-Sb thin film device for phase-change memory application.
Advances in OptoElectronics, 2012, part 840348, .
(doi:10.1155/2012/840348).
Abstract
Germanium antimony (Ge-Sb) thin films with tuneable compositions have been fabricated on SiO2/Si, borosilicate glass, and quartz glass substrates by chemical vapour deposition (CVD). Deposition takes place at atmospheric pressure using metal chloride precursors at reaction temperatures between 750 and 875 °C. The compositions and structures of these thin films have been characterized by micro-Raman, scanning electron microscope (SEM) with energy dispersive X-ray analysis (EDX), and X-ray diffraction (XRD) techniques. A prototype Ge-Sb thin film phase-change memory device has been fabricated and reversible threshold and phase change switching demonstrated electrically, with a threshold voltage of 2.2 - 2.5 V. These CVD-grown Ge-Sb films show promise for applications such as phase change memory and optical, electronic and plasmonic switching.
More information
Published date: January 2012
Organisations:
Optoelectronics Research Centre
Identifiers
Local EPrints ID: 337817
URI: http://eprints.soton.ac.uk/id/eprint/337817
ISSN: 1687-563X
PURE UUID: 370cf2c6-9b39-4013-8503-cc865af6d148
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Date deposited: 03 May 2012 15:42
Last modified: 15 Mar 2024 03:39
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Contributors
Author:
B. Gholipour
Author:
K. Knight
Author:
J.Y. Ou
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