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Deposition and characterization of CVD-grown Ge-Sb thin film device for phase-change memory application

Deposition and characterization of CVD-grown Ge-Sb thin film device for phase-change memory application
Deposition and characterization of CVD-grown Ge-Sb thin film device for phase-change memory application
Germanium antimony (Ge-Sb) thin films with tuneable compositions have been fabricated on SiO2/Si, borosilicate glass, and quartz glass substrates by chemical vapour deposition (CVD). Deposition takes place at atmospheric pressure using metal chloride precursors at reaction temperatures between 750 and 875 °C. The compositions and structures of these thin films have been characterized by micro-Raman, scanning electron microscope (SEM) with energy dispersive X-ray analysis (EDX), and X-ray diffraction (XRD) techniques. A prototype Ge-Sb thin film phase-change memory device has been fabricated and reversible threshold and phase change switching demonstrated electrically, with a threshold voltage of 2.2 - 2.5 V. These CVD-grown Ge-Sb films show promise for applications such as phase change memory and optical, electronic and plasmonic switching.
1687-563X
1-7
Huang, C.C.
825f7447-6d02-48f6-b95a-fa33da71f106
Gholipour, B.
c17bd62d-9df6-40e6-bc42-65272d97e559
Knight, K.
8834be4f-7dce-43fe-bafd-959e5893bd51
Ou, J.Y.
3fb703e3-b222-46d2-b4ee-75f296d9d64d
Hewak, D.W.
87c80070-c101-4f7a-914f-4cc3131e3db0
Huang, C.C.
825f7447-6d02-48f6-b95a-fa33da71f106
Gholipour, B.
c17bd62d-9df6-40e6-bc42-65272d97e559
Knight, K.
8834be4f-7dce-43fe-bafd-959e5893bd51
Ou, J.Y.
3fb703e3-b222-46d2-b4ee-75f296d9d64d
Hewak, D.W.
87c80070-c101-4f7a-914f-4cc3131e3db0

Huang, C.C., Gholipour, B., Knight, K., Ou, J.Y. and Hewak, D.W. (2012) Deposition and characterization of CVD-grown Ge-Sb thin film device for phase-change memory application. Advances in OptoElectronics, 2012, part 840348, 1-7. (doi:10.1155/2012/840348).

Record type: Article

Abstract

Germanium antimony (Ge-Sb) thin films with tuneable compositions have been fabricated on SiO2/Si, borosilicate glass, and quartz glass substrates by chemical vapour deposition (CVD). Deposition takes place at atmospheric pressure using metal chloride precursors at reaction temperatures between 750 and 875 °C. The compositions and structures of these thin films have been characterized by micro-Raman, scanning electron microscope (SEM) with energy dispersive X-ray analysis (EDX), and X-ray diffraction (XRD) techniques. A prototype Ge-Sb thin film phase-change memory device has been fabricated and reversible threshold and phase change switching demonstrated electrically, with a threshold voltage of 2.2 - 2.5 V. These CVD-grown Ge-Sb films show promise for applications such as phase change memory and optical, electronic and plasmonic switching.

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Published date: January 2012
Organisations: Optoelectronics Research Centre

Identifiers

Local EPrints ID: 337817
URI: http://eprints.soton.ac.uk/id/eprint/337817
ISSN: 1687-563X
PURE UUID: 370cf2c6-9b39-4013-8503-cc865af6d148
ORCID for C.C. Huang: ORCID iD orcid.org/0000-0003-3471-2463
ORCID for J.Y. Ou: ORCID iD orcid.org/0000-0001-8028-6130
ORCID for D.W. Hewak: ORCID iD orcid.org/0000-0002-2093-5773

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Date deposited: 03 May 2012 15:42
Last modified: 18 Feb 2021 17:17

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