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Rectangular polysilicon nanowires by top-down lithography, dry etch and metal induced lateral crystallization

Rectangular polysilicon nanowires by top-down lithography, dry etch and metal induced lateral crystallization
Rectangular polysilicon nanowires by top-down lithography, dry etch and metal induced lateral crystallization
In this work, we demonstrate a low temperature polysilicon nanowire fabrication process using amorphous silicon deposition over an oxide pillar, anisotropic reactive ion etch and metal-induced lateral crystallization (MILC). The fabricated nanowires are rectangular, with a width and height of around 100 nm. MILC is successfully achieved at temperatures down to 450ºC, making the process compatible with glass substrates and hence suitable for low cost, disposable biosensors. Crystallisation lengths of 4.1 µm and 0.8 µm are obtained for 15 hour anneals at 480ºC and 450ºC, respectively.
H62-H64
Sun, Kai
2ace53c1-82cc-47e5-911e-898b143163d3
Hakim, M.M.A.
e584d902-b647-49eb-85bf-15446c06652a
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Sun, Kai
2ace53c1-82cc-47e5-911e-898b143163d3
Hakim, M.M.A.
e584d902-b647-49eb-85bf-15446c06652a
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038

Sun, Kai, Hakim, M.M.A. and Ashburn, P (2012) Rectangular polysilicon nanowires by top-down lithography, dry etch and metal induced lateral crystallization. Electrochemical and Solid-State Letters, 15 (3), H62-H64. (doi:10.1149/2.011203esl).

Record type: Article

Abstract

In this work, we demonstrate a low temperature polysilicon nanowire fabrication process using amorphous silicon deposition over an oxide pillar, anisotropic reactive ion etch and metal-induced lateral crystallization (MILC). The fabricated nanowires are rectangular, with a width and height of around 100 nm. MILC is successfully achieved at temperatures down to 450ºC, making the process compatible with glass substrates and hence suitable for low cost, disposable biosensors. Crystallisation lengths of 4.1 µm and 0.8 µm are obtained for 15 hour anneals at 480ºC and 450ºC, respectively.

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More information

Submitted date: 5 October 2011
Published date: March 2012
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 337929
URI: https://eprints.soton.ac.uk/id/eprint/337929
PURE UUID: 15f22735-5ae8-49bc-8ddc-5845c74e0ae4

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Date deposited: 04 May 2012 09:30
Last modified: 17 Jul 2019 21:52

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