Gardes, F.Y., Brimont, A., Sanchis, P., Rasigade, G., Marris-Morini, D., O'Faolain, L., Dong, F., Fedeli, J.M., Dumon, P., Vivien, L., Krauss, T.F., Reed, G.T. and Martí, J.
High-speed modulation of a compact silicon ring resonator based on a reverse-biased pn diode
Optics Express, 17, (24), . (doi:10.1364/OE.17.021986).
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High speed modulation based on a compact silicon ring resonator operating in depletion mode is demonstrated. The device exhibits an electrical small signal bandwidth of 19GHz. The device is therefore a candidate for highly compact, wide bandwidth modulators for a variety of applications.
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