Strain effects on avalanche multiplication in a silicon nanodot array

Mori, Nobuya, Minari, Hideki, Uno, Shigeyasu, Mizuta, Hiroshi and Koshida, Nobuyoshi (2012) Strain effects on avalanche multiplication in a silicon nanodot array. [in special issue: Solid State Devices and Materials II] Japanese Journal of Applied Physics, 51, 04DJ01-[5pp]. (doi:10.1143/JJAP.51.04DJ01).

Record type: Article

Abstract

Strain effects on avalanche multiplication in a one-dimensional Si nanodot array have been theoretically studied. Compressive strain has two competing effects of the band-gap narrowing and the level-separation widening. The former reduces the ionization threshold and the latter reduces the impact ionization rate for higher energy region. Larger carrier multiplication factor is observed under compressive strain condition.

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Published date: 20 April 2012

Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 337970

URI: http://eprints.soton.ac.uk/id/eprint/337970

DOI: doi:10.1143/JJAP.51.04DJ01

ISSN: 0021-4922

PURE UUID: c819e420-24c5-4500-a03a-9ff8ba67b12e

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Date deposited: 09 May 2012 11:38

Last modified: 14 Mar 2024 11:00

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Contributors

Author: Nobuya Mori

Author: Hideki Minari

Author: Shigeyasu Uno

Author: Hiroshi Mizuta

Author: Nobuyoshi Koshida

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