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Strain effects on avalanche multiplication in a silicon nanodot array

Strain effects on avalanche multiplication in a silicon nanodot array
Strain effects on avalanche multiplication in a silicon nanodot array
Strain effects on avalanche multiplication in a one-dimensional Si nanodot array have been theoretically studied. Compressive strain has two competing effects of the band-gap narrowing and the level-separation widening. The former reduces the ionization threshold and the latter reduces the impact ionization rate for higher energy region. Larger carrier multiplication factor is observed under compressive strain condition.
0021-4922
04DJ01-[5pp]
Mori, Nobuya
ac4568f4-12e6-4287-b54d-cb0242d01ec8
Minari, Hideki
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Uno, Shigeyasu
acc03158-3412-448e-884e-4ad24947a77c
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Koshida, Nobuyoshi
f0f7d8b7-2566-4627-9f8c-ba5cecd11976
Mori, Nobuya
ac4568f4-12e6-4287-b54d-cb0242d01ec8
Minari, Hideki
9c3a6ccf-5e2a-47ee-926f-04bade1467ed
Uno, Shigeyasu
acc03158-3412-448e-884e-4ad24947a77c
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Koshida, Nobuyoshi
f0f7d8b7-2566-4627-9f8c-ba5cecd11976

Mori, Nobuya, Minari, Hideki, Uno, Shigeyasu, Mizuta, Hiroshi and Koshida, Nobuyoshi (2012) Strain effects on avalanche multiplication in a silicon nanodot array. [in special issue: Solid State Devices and Materials II] Japanese Journal of Applied Physics, 51, 04DJ01-[5pp]. (doi:10.1143/JJAP.51.04DJ01).

Record type: Article

Abstract

Strain effects on avalanche multiplication in a one-dimensional Si nanodot array have been theoretically studied. Compressive strain has two competing effects of the band-gap narrowing and the level-separation widening. The former reduces the ionization threshold and the latter reduces the impact ionization rate for higher energy region. Larger carrier multiplication factor is observed under compressive strain condition.

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JJAP-51-04DJ01.pdf - Version of Record
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More information

Published date: 20 April 2012
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 337970
URI: https://eprints.soton.ac.uk/id/eprint/337970
ISSN: 0021-4922
PURE UUID: c819e420-24c5-4500-a03a-9ff8ba67b12e

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Date deposited: 09 May 2012 11:38
Last modified: 19 Jul 2019 22:02

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Contributors

Author: Nobuya Mori
Author: Hideki Minari
Author: Shigeyasu Uno
Author: Hiroshi Mizuta
Author: Nobuyoshi Koshida

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