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Conduction bottleneck in silicon nanochain single electron transistors operating at room temperature

Conduction bottleneck in silicon nanochain single electron transistors operating at room temperature
Conduction bottleneck in silicon nanochain single electron transistors operating at room temperature
Single electron transistors are fabricated on single Si nanochains, synthesised by thermal evaporation of SiO solid sources. The nanochains consist of one-dimensional arrays of ?10 nm Si nanocrystals, separated by SiO2 regions. At 300 K, strong Coulomb staircases are seen in the drain–source current–voltage (Ids–Vds) characteristics, and single-electron oscillations are seen in the drain–source current–gate voltage (Ids–Vgs) characteristics. From 300–20 K, a large increase in the Coulomb blockade region is observed. The characteristics are explained using single-electron Monte Carlo simulation, where an inhomogeneous multiple tunnel junction represents a nanochain. Any reduction in capacitance at a nanocrystal well within the nanochain creates a conduction “bottleneck”, suppressing current at low voltage and improving the Coulomb staircase. The single-electron charging energy at such an island can be very high, ?20kBT at 300 K.
0021-4922
025202-[6pp]
Rafiq, Muhammad A.
537fec17-3937-4185-bb2a-a7ecc210d06a
Masubuchi, Katsunori
0ab121de-bbb2-4d88-a817-6e0d1ac1a0ce
Durrani, Zahid A.K.
a32ca6db-8463-40e3-98fc-9e5c8cfbd4a4
Colli, Alan
b80a7808-09e4-42b0-9941-b148abe81baf
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Milne, William I.
16e62894-a3d8-4927-8ab6-2f5285ad0d1b
Oda, Shunri
680a9899-52bb-4adc-8594-14bb92236fec
Rafiq, Muhammad A.
537fec17-3937-4185-bb2a-a7ecc210d06a
Masubuchi, Katsunori
0ab121de-bbb2-4d88-a817-6e0d1ac1a0ce
Durrani, Zahid A.K.
a32ca6db-8463-40e3-98fc-9e5c8cfbd4a4
Colli, Alan
b80a7808-09e4-42b0-9941-b148abe81baf
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Milne, William I.
16e62894-a3d8-4927-8ab6-2f5285ad0d1b
Oda, Shunri
680a9899-52bb-4adc-8594-14bb92236fec

Rafiq, Muhammad A., Masubuchi, Katsunori, Durrani, Zahid A.K., Colli, Alan, Mizuta, Hiroshi, Milne, William I. and Oda, Shunri (2012) Conduction bottleneck in silicon nanochain single electron transistors operating at room temperature. Japanese Journal of Applied Physics, 51 (2), 025202-[6pp]. (doi:10.1143/JJAP.51.025202).

Record type: Article

Abstract

Single electron transistors are fabricated on single Si nanochains, synthesised by thermal evaporation of SiO solid sources. The nanochains consist of one-dimensional arrays of ?10 nm Si nanocrystals, separated by SiO2 regions. At 300 K, strong Coulomb staircases are seen in the drain–source current–voltage (Ids–Vds) characteristics, and single-electron oscillations are seen in the drain–source current–gate voltage (Ids–Vgs) characteristics. From 300–20 K, a large increase in the Coulomb blockade region is observed. The characteristics are explained using single-electron Monte Carlo simulation, where an inhomogeneous multiple tunnel junction represents a nanochain. Any reduction in capacitance at a nanocrystal well within the nanochain creates a conduction “bottleneck”, suppressing current at low voltage and improving the Coulomb staircase. The single-electron charging energy at such an island can be very high, ?20kBT at 300 K.

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More information

Published date: 6 February 2012
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 337971
URI: https://eprints.soton.ac.uk/id/eprint/337971
ISSN: 0021-4922
PURE UUID: 16b6d0cf-3130-4b6b-96f7-c455812de45a

Catalogue record

Date deposited: 09 May 2012 11:47
Last modified: 16 Jul 2019 22:05

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