High ON/OFF ratio and multimode transport in silicon nanochains field effect transistors

Rafiq, M.A., Masubuchi, K., Durrani, Z.A.K., Colli, A., Mizuta, H., Milne, W.I. and Oda, S. (2012) High ON/OFF ratio and multimode transport in silicon nanochains field effect transistors. Applied Physics Letters, 100 (11), 113108-[4pp]. (doi:10.1063/1.3694046).

Abstract

We have observed multimode transport and high ON/OFF ratio in silicon nanochain devices. Silicon nanochains grown by thermal evaporation of SiO solid sources consisted of chains of silicon nanocrystals ~10 nm in diameter, separated by SiO₂ regions. The devices were fabricated using electron beam lithography on SiO₂ thermally grown on silicon substrate. These devices exhibited high ON/OFF current ratio up to 10⁴. The inverse subthreshold slope as small as ~500 mV/decade was observed in these devices. Therefore, we believe silicon nanochains hold great potential to be used in field effect transistors.

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